Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity

doi:10.1021/acsnano.2c03263

IMR OpenIR

	Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity
	Tang, Lei 1,2; Teng, Changjiu 1,2; Xu, Runzhang 1,2; Zhang, Zehao 1,2; Khan, Usman 1,2; Zhang, Rongjie 1,2; Luo, Yuting 1,2; Nong, Huiyu 1,2; Liu, Bilu 1,2; Cheng, Hui-Ming 1,2,3,4
通讯作者	Liu, Bilu(bilu.liu@sz.tsinghua.edu.cn) ; Cheng, Hui-Ming(cheng@imr.ac.cn)
	2022-08-23
发表期刊	ACS NANO
ISSN	1936-0851
卷号	16 期号:8 页码:12318-12327
摘要	Artificial synapses are promising for dealing with large amounts of data computing. Great progress has been made recently in terms of improving the on/off current ratio, the number of states, and the energy efficiency of synapse devices. However, the nonlinear weight update behavior of a synapse caused by the uncertain direction of the conductive filament leads to complex weight modulation, which degrades the delivery accuracy of information. Here we propose a strategy to improve the weight update behavior of synapses using chemical-vapor-deposition -grown transition metal dichalcogenides (TMDCs) with a vertical composition gradient, where the sulfur concentration decreases gradually along the thickness direction of TMDCs and thus forms a certain direction of the conduction filament for synapse devices. It is worth noting that the devices show an excellent linear conductance of potentiation and depression with a high linearity of 0.994 (surpassing most state-of-the-art synapses), have a large number of states, and are able to fabricate synapse arrays with wafer-scale. Furthermore, the devices based on the TMDCs with the vertical composition gradient exhibit an asymmetric feature of potentiation and depression behaviors with high linearity and follow the simulated linear Leaky ReLU function, resulting in a high recognition accuracy of 94.73%, which overcomes the unreliability issue in the Sigmoid function due to the vanishing gradient phenomenon. This study not only provides a universal method to grow TMDCs with a vertical composition gradient but also contributes to exploring highly linear synapses toward neuromorphic computing.
关键词	vertical composition gradient transition metal dichalcogenides chemical vapor deposition wafer-scale artificial synapses device array linearity
资助者	National Natural Science Foundation of China ; National Science Fund for Distinguished Young Scholars ; Guangdong Innovative and Entrepreneurial Research Team Program ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project ; Shenzhen Basic Research Program
DOI	10.1021/acsnano.2c03263
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China[51991343] ; National Natural Science Foundation of China[51991340] ; National Natural Science Foundation of China[52188101] ; National Science Fund for Distinguished Young Scholars[52125309] ; Guangdong Innovative and Entrepreneurial Research Team Program[2017ZT07C341] ; Bureau of Industry and Information Technology of Shenzhen for the 2017 Graphene Manufacturing Innovation Center Project[201901171523] ; Shenzhen Basic Research Program[JCYJ20200109144616617]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000848309900001
出版者	AMER CHEMICAL SOC
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/175059
专题	中国科学院金属研究所
通讯作者	Liu, Bilu; Cheng, Hui-Ming
作者单位	1.Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 2.Tsinghua Univ, Inst Mat Res, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 4.Chinese Acad Sci, Shenzhen Inst Adv Technol, Inst Technol Carbon Neutral, Fac Mat & Engn, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Tang, Lei,Teng, Changjiu,Xu, Runzhang,et al. Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity[J]. ACS NANO,2022,16(8):12318-12327.
APA	Tang, Lei.,Teng, Changjiu.,Xu, Runzhang.,Zhang, Zehao.,Khan, Usman.,...&Cheng, Hui-Ming.(2022).Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity.ACS NANO,16(8),12318-12327.
MLA	Tang, Lei,et al."Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity".ACS NANO 16.8(2022):12318-12327.