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Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies 期刊论文
SCIENCE BULLETIN, 2022, 卷号: 67, 期号: 16, 页码: 1649-1658
Authors:  Tan, Junyang;  Zhang, Zongteng;  Zeng, Shengfeng;  Li, Shengnan;  Wang, Jingwei;  Zheng, Rongxu;  Hou, Fuchen;  Wei, Yinping;  Sun, Yujie;  Zhang, Rongjie;  Zhao, Shilong;  Nong, Huiyu;  Chen, Wenjun;  Gan, Lin;  Zou, Xiaolong;  Zhao, Yue;  Lin, Junhao;  Liu, Bilu;  Cheng, Hui -Ming
Favorite  |  View/Download：34/0  |  Submit date：2023/05/09
Non-layered two-dimensional materials  Transition metal chalcogenides  Dual-metal precursors  Chemical vapor deposition  Ordered cation vacancies  
Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity 期刊论文
ACS NANO, 2022, 卷号: 16, 期号: 8, 页码: 12318-12327
Authors:  Tang, Lei;  Teng, Changjiu;  Xu, Runzhang;  Zhang, Zehao;  Khan, Usman;  Zhang, Rongjie;  Luo, Yuting;  Nong, Huiyu;  Liu, Bilu;  Cheng, Hui-Ming
Favorite  |  View/Download：72/0  |  Submit date：2022/10/08
vertical composition gradient  transition metal dichalcogenides  chemical vapor deposition  wafer-scale  artificial synapses  device array  linearity