Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect

doi:10.1002/aelm.202200987

IMR OpenIR

	Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect
	Song, Yuhang 1,2; Dai, Zhiming 3,4; Liu, Long 1; Wu, Jinxiang 1,2; Li, Tingting 1,2; Zhao, Xiaotian 1; Liu, Wei 1; Zhang, Zhidong 1
通讯作者	Zhao, Xiaotian(xtzhao@imr.ac.cn) ; Liu, Wei(wliu@imr.ac.cn)
	2022-11-09
发表期刊	ADVANCED ELECTRONIC MATERIALS
ISSN	2199-160X
页码	8
摘要	Field-free switching is a critical issue for spin-orbit torque-induced magnetic random-access memory (SOT-MRAM) with perpendicular magnetic anisotropic (PMA) towards application. If only the spin-polarized electrons along the y-direction (sigma(y)) are used, deterministic switching cannot be achieved, as the electron polarization direction and easy magnetization direction are orthogonal. In this work, z-direction polarized electrons (sigma(z)) produced by the spin Hall effect are utilized to provide the switching direction and sigma(y) provides the propulsion of magnetic reorientation. With the cooperation of sigma(y) and sigma(z) by the spin Hall effect, field-free switching is achieved. To combine with magnetic tunnel junction (MTJ), a model is proposed, in which heavy metals providing sigma(z) are deposited on MTJ with asymmetric writing line widths. This model retains the characteristics of read-write separation and realizes deterministic switching based on SOT.
关键词	field-free switching perpendicular magnetic anisotropy spin Hall effect spin-orbit torque spin-polarized electrons
资助者	National Nature Science Foundation of China
DOI	10.1002/aelm.202200987
收录类别	SCI
语种	英语
资助项目	National Nature Science Foundation of China[52031014] ; National Nature Science Foundation of China[52171196]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000880377000001
出版者	WILEY
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/176551
专题	中国科学院金属研究所
通讯作者	Zhao, Xiaotian; Liu, Wei
作者单位	1.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 3.Huaiyin Normal Univ, Dept Phys, Huaian 223300, Peoples R China 4.Huaiyin Normal Univ, Jiangsu Key Lab Modern Measurement Technol & Inte, Huaian 223300, Peoples R China
推荐引用方式 GB/T 7714	Song, Yuhang,Dai, Zhiming,Liu, Long,et al. Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect[J]. ADVANCED ELECTRONIC MATERIALS,2022:8.
APA	Song, Yuhang.,Dai, Zhiming.,Liu, Long.,Wu, Jinxiang.,Li, Tingting.,...&Zhang, Zhidong.(2022).Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect.ADVANCED ELECTRONIC MATERIALS,8.
MLA	Song, Yuhang,et al."Field-Free Spin-Orbit Torque Switching of Perpendicular Magnetization by Making Full Use of Spin Hall Effect".ADVANCED ELECTRONIC MATERIALS (2022):8.