Quantum Hall phase in graphene engineered by interfacial charge coupling

doi:10.1038/s41565-022-01248-4

IMR OpenIR

	Quantum Hall phase in graphene engineered by interfacial charge coupling
	Wang, Yaning 1,2,3,4,5; Gao, Xiang 1,3; Yang, Kaining 1,3; Gu, Pingfan 6,7,8; Lu, Xin 9; Zhang, Shihao 9,10; Gao, Yuchen 6,7,8; Ren, Naijie 1,3; Dong, Baojuan 1,3; Jiang, Yuhang 11; Watanabe, Kenji 12; Taniguchi, Takashi 13; Kang, Jun 14; Lou, Wenkai 15; Mao, Jinhai 16,17; Liu, Jianpeng 9,10; Ye, Yu 6,7,8; Han, Zheng 1,3,5; Chang, Kai 15; Zhang, Jing 1,3; Zhang, Zhidong 2,4
通讯作者	Mao, Jinhai(jhmao@ucas.ac.cn) ; Liu, Jianpeng(liujp@shanghaitech.edu.cn) ; Ye, Yu(ye_yu@pku.edu.cn) ; Han, Zheng(vitto.han@gmail.com) ; Chang, Kai(kchang@semi.ac.cn)
	2022-11-21
发表期刊	NATURE NANOTECHNOLOGY
ISSN	1748-3387
页码	9
摘要	Interfacing graphene with an antiferromagnetic insulator CrOCl enables the observation of strong interfacial coupling in the quantum Hall regime. The quantum Hall effect can be substantially affected by interfacial coupling between the host two-dimensional electron gases and the substrate, and has been predicted to give rise to exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this interaction remains challenging. Here we demonstrate the observation of an unusual quantum Hall effect, which differs markedly from that of the known picture, in graphene samples in contact with an antiferromagnetic insulator CrOCl equipped with dual gates. Two distinct quantum Hall phases are developed, with the Landau levels in monolayer graphene remaining intact at the conventional phase, but largely distorted for the interfacial-coupling phase. The latter quantum Hall phase is even present close to the absence of a magnetic field, with the consequential Landau quantization following a parabolic relation between the displacement field and the magnetic field. This characteristic prevails up to 100 K in a wide effective doping range from 0 to 10(13) cm(-2).
资助者	National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Chinese Academy of Sciences ; MEXT, Japan ; JSPS KAKENHI ; JSPS
DOI	10.1038/s41565-022-01248-4
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2019YFA0307800] ; National Key R&D Program of China[2017YFA0303400] ; National Key R&D Program of China[2017YFA0206302] ; National Key R&D Program of China[2018YFA0306900] ; National Key R&D Program of China[2020YFA0309601] ; National Key R&D Program of China[2018YFA0306101] ; National Natural Science Foundation of China (NSFC)[92265203] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[52031014] ; National Natural Science Foundation of China (NSFC)[11974340] ; National Natural Science Foundation of China (NSFC)[12174257] ; National Natural Science Foundation of China (NSFC)[U21A6004] ; National Natural Science Foundation of China (NSFC)[12004228] ; National Natural Science Foundation of China (NSFC)[51627801] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB28000000] ; Chinese Academy of Sciences[QYZDJ-SSW-SYS001] ; Chinese Academy of Sciences[XDPB22] ; MEXT, Japan[JPMXP0112101001] ; JSPS KAKENHI[JP20H00354] ; JSPS
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000886188900002
出版者	NATURE PORTFOLIO
引用统计	被引频次：23[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/176858
专题	中国科学院金属研究所
通讯作者	Mao, Jinhai; Liu, Jianpeng; Ye, Yu; Han, Zheng; Chang, Kai
作者单位	1.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China 3.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan, Peoples R China 4.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang, Peoples R China 5.Liaoning Acad Mat, Shenyang, Peoples R China 6.Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China 7.Peking Univ, State Key Lab Mesoscop Phys, Sch Phys, Beijing, Peoples R China 8.Peking Univ, Frontiers Sci Ctr Nanooptoelect, Sch Phys, Beijing, Peoples R China 9.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 10.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai, Peoples R China 11.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing, Peoples R China 12.Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki, Japan 13.Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki, Japan 14.Beijing Computat Sci Res Ctr, Beijing, Peoples R China 15.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing, Peoples R China 16.Univ Chinese Acad Sci, Sch Phys Sci, Beijing, Peoples R China 17.Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Wang, Yaning,Gao, Xiang,Yang, Kaining,et al. Quantum Hall phase in graphene engineered by interfacial charge coupling[J]. NATURE NANOTECHNOLOGY,2022:9.
APA	Wang, Yaning.,Gao, Xiang.,Yang, Kaining.,Gu, Pingfan.,Lu, Xin.,...&Zhang, Zhidong.(2022).Quantum Hall phase in graphene engineered by interfacial charge coupling.NATURE NANOTECHNOLOGY,9.
MLA	Wang, Yaning,et al."Quantum Hall phase in graphene engineered by interfacial charge coupling".NATURE NANOTECHNOLOGY (2022):9.