Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene

doi:10.1038/s41467-023-37769-2

IMR OpenIR

	Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene
	Yang, Kaining 1,2; Gao, Xiang 1,2; Wang, Yaning 3,4; Zhang, Tongyao 1,2; Gao, Yuchen 5,6,7; Lu, Xin 8; Zhang, Shihao 8; Liu, Jianpeng 8,9; Gu, Pingfan 5,6,7; Luo, Zhaoping 3; Zheng, Runjie 10; Cao, Shimin 10,11; Wang, Hanwen 3; Sun, Xingdan 3; Watanabe, Kenji 12; Taniguchi, Takashi 13; Li, Xiuyan 3,14; Zhang, Jing 1,2; Dai, Xi 14,15; Chen, Jian-Hao 10,11,16,17; Ye, Yu 5,6,7; Han, Zheng 1,2,18
通讯作者	Lu, Xin(lvxin@shanghaitech.edu.cn) ; Dai, Xi(daix@ust.hk) ; Chen, Jian-Hao(chenjianhao@pku.edu.cn) ; Ye, Yu(ye_yu@pku.edu.cn) ; Han, Zheng(vitto.han@gmail.com)
	2023-04-14
发表期刊	NATURE COMMUNICATIONS
卷号	14 期号:1 页码:10
摘要	Here, the authors report evidence of unconventional correlated insulating states in bilayer graphene/CrOCl heterostructures over wide doping ranges and demonstrate their application for the realization of low-temperature logic inverters. The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1-G omega-resistance insulating state in a widely accessible gate voltage range. The insulating state could be switched into a metallic state with an on/off ratio up to 10(7) by applying an in-plane electric field, heating, or gating. We tentatively associate the observed behavior to the formation of a surface state in CrOCl under vertical electric fields, promoting electron-electron (e-e) interactions in BLG via long-range Coulomb coupling. Consequently, at the charge neutrality point, a crossover from single particle insulating behavior to an unconventional correlated insulator is enabled, below an onset temperature. We demonstrate the application of the insulating state for the realization of a logic inverter operating at low temperatures. Our findings pave the way for future engineering of quantum electronic states based on interfacial charge coupling.
资助者	National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Elemental Strategy Initiative ; MEXT, Japan ; JSPS KAKENHI ; A3 Foresight by JSPS ; Beijing Municipal Natural Science Foundation
DOI	10.1038/s41467-023-37769-2
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2019YFA0307800] ; National Key R&D Program of China[2017YFA0206301] ; National Key R&D Program of China[2018YFA0306900] ; National Key R&D Program of China[2019YFA0308402] ; National Key R&D Program of China[2018YFA0305604] ; National Natural Science Foundation of China (NSFC)[92265203] ; National Natural Science Foundation of China (NSFC)[11974357] ; National Natural Science Foundation of China (NSFC)[U1932151] ; National Natural Science Foundation of China (NSFC)[11934001] ; National Natural Science Foundation of China (NSFC)[11774010] ; National Natural Science Foundation of China (NSFC)[92265106] ; National Natural Science Foundation of China (NSFC)[11921005] ; Elemental Strategy Initiative ; MEXT, Japan[JPMXP0112101001] ; JSPS KAKENHI[JP20H00354] ; A3 Foresight by JSPS ; Beijing Municipal Natural Science Foundation[JQ20002]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:000969250300021
出版者	NATURE PORTFOLIO
引用统计	被引频次：13[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/177696
专题	中国科学院金属研究所
通讯作者	Lu, Xin; Dai, Xi; Chen, Jian-Hao; Ye, Yu; Han, Zheng
作者单位	1.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan, Peoples R China 2.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China 4.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei, Anhui, Peoples R China 5.Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China 6.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing, Peoples R China 7.Peking Univ, Sch Phys, Frontiers Sci Ctr Nano Optoelect, Beijing, Peoples R China 8.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 9.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai, Peoples R China 10.Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing, Peoples R China 11.Beijing Acad Quantum Informat Sci, Beijing, Peoples R China 12.Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Japan 13.Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Japan 14.Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA 15.Hongkong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China 16.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing, Peoples R China 17.Hefei Natl Lab, Hefei, Peoples R China 18.Liaoning Acad Mat, Shenyang, Peoples R China
推荐引用方式 GB/T 7714	Yang, Kaining,Gao, Xiang,Wang, Yaning,et al. Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene[J]. NATURE COMMUNICATIONS,2023,14(1):10.
APA	Yang, Kaining.,Gao, Xiang.,Wang, Yaning.,Zhang, Tongyao.,Gao, Yuchen.,...&Han, Zheng.(2023).Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene.NATURE COMMUNICATIONS,14(1),10.
MLA	Yang, Kaining,et al."Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene".NATURE COMMUNICATIONS 14.1(2023):10.