Annealing-induced improvement in thermal conductivity of Si<sub>3</sub>N<sub>4 </sub>specimens produced by vat photopolymerization: A comparative study of vat photopolymerization and cold isostatic pressing

doi:10.1016/j.ceramint.2024.11.380

IMR OpenIR

	Annealing-induced improvement in thermal conductivity of Si₃N₄specimens produced by vat photopolymerization: A comparative study of vat photopolymerization and cold isostatic pressing
	Zhang, Chi 1; Wang, Ning 1; Chang, Hai 1; Wu, Yingna 1; Yang, Rui 1,2; Yao, Dongxu 3; Zhai, Zirong 1
通讯作者	Yao, Dongxu(yaodongxu@mail.sic.ac.cn) ; Zhai, Zirong(zhaizr@shanghaitech.edu.cn)
	2025
发表期刊	CERAMICS INTERNATIONAL
ISSN	0272-8842
卷号	51 期号:3 页码:4011-4022
摘要	This study addresses challenges in manufacturing high-quality silicon nitride (Si3N4) products using vat photopolymerization (VPP), a method that enables highly precise and complex manufacturing that was previously unachievable. A comparison of VPP and cold isostatic pressing (CIP) showed that the intergranular phases of VPP samples exhibited continuous network assembly, while the intergranular phases of CIP samples were dispersed and aggregated. For densification, VPP samples required more aggressive sintering conditions and a higher MgO content. This prolonged densification process adversely affected thermal conductivity, only reaching a maximum of 70.91 W m- 1 center dot K- 1. Through annealing, thermal conductivity of VPP sample improved by 72.44 %, narrowing the gap with CIP sample (90.28 W m- 1 center dot K- 1) and reaching up to 96.20 W m- 1 center dot K- 1. Si3N4 sample exhibiting high flexural strength of 908.28 f 46.90 MPa were prepared using VPP. This study proposes a viable approach for producing high-performance Si3N4 heat exchangers and other complex devices via VPP.
关键词	Vat photopolymerization Cold isostatic pressing Thermal conductivity Annealing Sintering process
资助者	National Key R & D Program of China ; Double First- Class Initiative Fund ; ShanghaiTech University
DOI	10.1016/j.ceramint.2024.11.380
收录类别	SCI
语种	英语
资助项目	National Key R & D Program of China[2022YFB3706302] ; Double First- Class Initiative Fund ; ShanghaiTech University
WOS研究方向	Materials Science
WOS类目	Materials Science, Ceramics
WOS记录号	WOS:001409641300001
出版者	ELSEVIER SCI LTD
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/180575
专题	中国科学院金属研究所
通讯作者	Yao, Dongxu; Zhai, Zirong
作者单位	1.ShanghaiTech Univ, Ctr Adapt Syst Engn, 393 Huaxia Middle Rd, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine M, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Chi,Wang, Ning,Chang, Hai,et al. Annealing-induced improvement in thermal conductivity of Si₃N₄specimens produced by vat photopolymerization: A comparative study of vat photopolymerization and cold isostatic pressing[J]. CERAMICS INTERNATIONAL,2025,51(3):4011-4022.
APA	Zhang, Chi.,Wang, Ning.,Chang, Hai.,Wu, Yingna.,Yang, Rui.,...&Zhai, Zirong.(2025).Annealing-induced improvement in thermal conductivity of Si₃N₄specimens produced by vat photopolymerization: A comparative study of vat photopolymerization and cold isostatic pressing.CERAMICS INTERNATIONAL,51(3),4011-4022.
MLA	Zhang, Chi,et al."Annealing-induced improvement in thermal conductivity of Si₃N₄specimens produced by vat photopolymerization: A comparative study of vat photopolymerization and cold isostatic pressing".CERAMICS INTERNATIONAL 51.3(2025):4011-4022.