Microstructure and optical properties of β-Ga 2 O 3 thin films fabricated by pulsed laser deposition

doi:10.1016/j.tsf.2024.140336

IMR OpenIR

	Microstructure and optical properties of β-Ga 2 O 3 thin films fabricated by pulsed laser deposition
	Wu, Yiwen 1,2; Yan, Xuexi 1,3; Jiang, Yixiao 1,3; Yao, Tingting 1,3; Chen, Chunlin 1,3; Ye, Hengqiang 4
通讯作者	Chen, Chunlin(clchen@imr.ac.cn)
	2024-05-15
发表期刊	THIN SOLID FILMS
ISSN	0040-6090
卷号	796 页码:7
摘要	beta- Ga 2 O 3 has attracted extensive attention in the fields of optoelectronics and high-power electric devices due to its excellent electrical properties and thermal stability. Growth of epitaxial beta- Ga 2 O 3 films with good crystallinity is challenging since it is difficult to effectively control the impurities in the films. Here, beta- Ga 2 O 3 thin films were epitaxially grown on MgO (100) substrates via pulsed laser deposition system. The microstructure and optical properties of the beta- Ga 2 O 3 thin films were systematically characterized by combining high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet-visible spectrophotometer and advanced transmission electron microscopy. Effects of the growth temperature and O 2 partial pressure on the crystallinity, valance states of Ga ions and band gap of the beta- Ga 2 O 3 thin films were investigated. The light absorption wavelength of the beta- Ga 2 O 3 thin films ranges from 220 nm to 260 nm, which is close to the theoretical value. The epitaxial orientation between beta- Ga 2 O 3 film and MgO substrate is beta- Ga 2 O 3 (100) [021] // MgO (100) [010]. A thin layer of gamma- Ga 2 O 3 exists in the interfacial region.
关键词	Gallium (iii) oxide Thin film Pulsed laser deposition Transmission electron microscopy Optical properties
资助者	National Natural Sci- ence Foundation of China ; Basic and Applied Basic Research Major Programme of Guangdong Province, China
DOI	10.1016/j.tsf.2024.140336
收录类别	SCI
语种	英语
资助项目	National Natural Sci- ence Foundation of China[52125101] ; National Natural Sci- ence Foundation of China[51971224] ; National Natural Sci- ence Foundation of China[52001309] ; National Natural Sci- ence Foundation of China[X210141TL210] ; Basic and Applied Basic Research Major Programme of Guangdong Province, China[2021B0301030003]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001232072100001
出版者	ELSEVIER SCIENCE SA
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/186402
专题	中国科学院金属研究所
通讯作者	Chen, Chunlin
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Nano Sci & Technol Inst, Suzhou 215123, Peoples R China 3.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China 4.Ji Hua Lab, Foshan 528200, Peoples R China
推荐引用方式 GB/T 7714	Wu, Yiwen,Yan, Xuexi,Jiang, Yixiao,et al. Microstructure and optical properties of β-Ga 2 O 3 thin films fabricated by pulsed laser deposition[J]. THIN SOLID FILMS,2024,796:7.
APA	Wu, Yiwen,Yan, Xuexi,Jiang, Yixiao,Yao, Tingting,Chen, Chunlin,&Ye, Hengqiang.(2024).Microstructure and optical properties of β-Ga 2 O 3 thin films fabricated by pulsed laser deposition.THIN SOLID FILMS,796,7.
MLA	Wu, Yiwen,et al."Microstructure and optical properties of β-Ga 2 O 3 thin films fabricated by pulsed laser deposition".THIN SOLID FILMS 796(2024):7.