Van der Waals polarity-engineered 3D integration of 2D complementary logic

doi:10.1038/s41586-024-07438-5

IMR OpenIR

	Van der Waals polarity-engineered 3D integration of 2D complementary logic
	Guo, Yimeng 1,2; Li, Jiangxu 1; Zhan, Xuepeng 3; Wang, Chunwen 4,5; Li, Min 6,7; Zhang, Biao 8,9; Wang, Zirui 10; Liu, Yueyang 11; Yang, Kaining 12,13; Wang, Hai 3; Li, Wanying 1; Gu, Pingfan 14,15,16; Luo, Zhaoping 1; Liu, Yingjia 1,2; Liu, Peitao 1; Chen, Bo 3; Watanabe, Kenji 17; Taniguchi, Takashi 18; Chen, Xing-Qiu 1; Qin, Chengbing 13,19; Chen, Jiezhi 3; Sun, Dongming 1; Zhang, Jing 12,13; Wang, Runsheng 10; Liu, Jianpeng 6,7,20; Ye, Yu 14,15,16,20; Li, Xiuyan 1,20; Hou, Yanglong 8,9; Zhou, Wu 4,5; Wang, Hanwen 20; Han, Zheng 12,13,20
通讯作者	Li, Xiuyan(xyli@imr.ac.cn) ; Hou, Yanglong(hou@pku.edu.cn) ; Zhou, Wu(wuzhou@ucas.ac.cn) ; Wang, Hanwen(hwwang@lam.ln.cn) ; Han, Zheng(vitto.han@gmail.com)
	2024-05-29
发表期刊	NATURE
ISSN	0028-0836
页码	18
摘要	Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis 1-3 . Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures 4,5 , as well as hetero-2D layers with different carrier types 6-8 , have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe2 (refs. 9-17 ) and MoS2 (refs. 11,18-28 )) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS2, atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm2 V-1 s-1, on/off ratios reaching 106 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates. We develop a method for high-density vertical stacking of active-device multi-layers, implementing memory and logic functions, using unique VIP-FETs where a van der Waals intercalation layer modulates the p- or n-type nature of the FETs.
资助者	National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Fund for Shanxi 1331 Project Key Subjects Construction ; Innovation Program for Quantum Science and Technology ; Electron Microscopy Center at the University of Chinese Academy of Sciences ; JSPS KAKENHI ; World Premier International Research Center Initiative (WPI), MEXT, Japan ; Beijing Outstanding Young Scientist Program ; CAS Project for Young Scientists in Basic Research ; Science and Technology Commission of the Shanghai Municipality
DOI	10.1038/s41586-024-07438-5
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2022YFA1203903] ; National Key R&D Program of China[2023YFF1500600] ; National Key R&D Program of China[2019YFA0307800] ; National Key R&D Program of China[2022YFA1203902] ; National Natural Science Foundation of China (NSFC)[92265203] ; National Natural Science Foundation of China (NSFC)[12104462] ; National Natural Science Foundation of China (NSFC)[12250007] ; National Natural Science Foundation of China (NSFC)[12034011] ; National Natural Science Foundation of China (NSFC)[U23A6004] ; National Natural Science Foundation of China (NSFC)[92263203] ; National Natural Science Foundation of China (NSFC)[52188101] ; Fund for Shanxi 1331 Project Key Subjects Construction ; Innovation Program for Quantum Science and Technology[2021ZD0302003] ; Electron Microscopy Center at the University of Chinese Academy of Sciences ; JSPS KAKENHI[20H00354] ; JSPS KAKENHI[23H02052] ; World Premier International Research Center Initiative (WPI), MEXT, Japan ; Beijing Outstanding Young Scientist Program[BJJWZYJH01201914430039] ; CAS Project for Young Scientists in Basic Research[YSBR-003] ; Science and Technology Commission of the Shanghai Municipality[21JC1405100]
WOS研究方向	Science & Technology - Other Topics
WOS类目	Multidisciplinary Sciences
WOS记录号	WOS:001262413200016
出版者	NATURE PORTFOLIO
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/187638
专题	中国科学院金属研究所
通讯作者	Li, Xiuyan; Hou, Yanglong; Zhou, Wu; Wang, Hanwen; Han, Zheng
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei, Anhui, Peoples R China 3.Shandong Univ, Sch Informat Sci & Engn ISE, Qingdao, Peoples R China 4.Univ Chinese Acad Sci, Sch Phys Sci, Beijing, Peoples R China 5.Univ Chinese Acad Sci, CAS Key Lab Vacuum Phys, Beijing, Peoples R China 6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 7.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai, Peoples R China 8.Sun Yat Sen Univ, Sch Mat, Shenzhen Campus, Shenzhen, Peoples R China 9.Peking Univ, Sch Mat Sci & Engn, Beijing Key Lab Magnetoelect Mat & Devices, Beijing, Peoples R China 10.Peking Univ, Sch Integrated Circuits, Beijing, Peoples R China 11.Chinese Acad Sci Beijing, Inst Semicond, State Key Lab Superlatt & Microstruct, Beijing, Peoples R China 12.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan, Peoples R China 13.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan, Peoples R China 14.Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China 15.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing, Peoples R China 16.Peking Univ, Frontiers Sci Ctr Nanooptoelect, Sch Phys, Beijing, Peoples R China 17.Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Japan 18.Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Japan 19.Shanxi Univ, Inst Laser Spect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan, Peoples R China 20.Liaoning Acad Mat, Shenyang, Peoples R China
推荐引用方式 GB/T 7714	Guo, Yimeng,Li, Jiangxu,Zhan, Xuepeng,et al. Van der Waals polarity-engineered 3D integration of 2D complementary logic[J]. NATURE,2024:18.
APA	Guo, Yimeng.,Li, Jiangxu.,Zhan, Xuepeng.,Wang, Chunwen.,Li, Min.,...&Han, Zheng.(2024).Van der Waals polarity-engineered 3D integration of 2D complementary logic.NATURE,18.
MLA	Guo, Yimeng,et al."Van der Waals polarity-engineered 3D integration of 2D complementary logic".NATURE (2024):18.