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Super High-k Unit-Cell-Thick α-CaCr2O4 Crystals
Li, Hui1,2; Xu, Chuan1,2; Liu, Zhibo1,2; Zhou, Tianya1; Tong, Jinmeng1,2; Wang, Qiang1,2; Liu, Xuanya1,2; Jin, Qianqian3; Cheng, Hui-Ming1,4; Ren, Wencai1,2
通讯作者Ren, Wencai(wcren@imr.ac.cn)
2024-10-28
发表期刊ACS NANO
ISSN1936-0851
卷号18期号:45页码:31014-31020
摘要High-dielectric-constant (high-k) insulators are indispensable components to integrate semiconductors into metal-oxide-semiconductor field-effect transistors with sub-10 nm channel length, where the equivalent oxide thickness (EOT) of high-k insulator needs to be decreased to subnanometer scale. The traditional insulators, including Al2O3, SiO2, and HfO2, fit well with the existing silicon industry but suffer from serious degeneration of insulating properties, such as large leakage currents caused by high-density borders and interface traps, when their thicknesses are reduced to a few nanometers. Here, we synthesize a high-quality nonlayered ultrathin alpha-CaCr2O4 crystal down to unit-cell thickness (similar to 1.2 nm) by an elements slow-supply chemical vapor deposition (CVD) method. The unit-cell-thick alpha-CaCr2O4 crystals show a super high dielectric constant of 87.34, which is over 20 times higher than that of well-known layered insulator h-BN and corresponds to an EOT below 1 nm. Furthermore, it has a high breaking strength (39 GPa) and excellent stability. This strategy can also be used to fabricate other ultrathin ternary oxides, such as high-k ultrathin FeNb2O6 crystals, demonstrating the universality of the CVD method.
关键词alpha-CaCr2O4 2Dcrystal unit-cell thickness high-k insulator chemical vapor deposition
资助者National Natural Science Foundation of China ; National Natural Science Foundation of China ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences ; LiaoNing Revitalization Talents Program ; Institute of Metal Research, Chinese Academy of Sciences ; Youth Innovation Promotion Association CAS ; Special Projects of the Central Government in Guidance of Local Science and Technology Development ; Guangdong Basic and Applied Basic Research Foundation
DOI10.1021/acsnano.4c07032
收录类别SCI
语种英语
资助项目National Natural Science Foundation of China[52188101] ; National Natural Science Foundation of China[52122202] ; National Natural Science Foundation of China[52272050] ; National Natural Science Foundation of China[ZDBS-LY-JSC027] ; Key Research Program of Frontier Sciences of the Chinese Academy of Sciences[XLYC2201003] ; LiaoNing Revitalization Talents Program[2019000178] ; Institute of Metal Research, Chinese Academy of Sciences[2021000185] ; Youth Innovation Promotion Association CAS[2024010859-JH6/1006] ; Special Projects of the Central Government in Guidance of Local Science and Technology Development[2020B0301030002] ; Guangdong Basic and Applied Basic Research Foundation
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:001344643600001
出版者AMER CHEMICAL SOC
引用统计
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/191036
专题中国科学院金属研究所
通讯作者Ren, Wencai
作者单位1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
3.Guangxi Univ Sci & Technol, Ctr Struct Adv Matter, Sch Elect Engn, Liuzhou 545006, Peoples R China
4.Chinese Acad Sci, Inst Technol Carbon Neutral, Shenzhen Inst Adv Technol, Fac Mat Sci & Energy Engn, Shenzhen 518055, Peoples R China
推荐引用方式
GB/T 7714
Li, Hui,Xu, Chuan,Liu, Zhibo,et al. Super High-k Unit-Cell-Thick α-CaCr2O4 Crystals[J]. ACS NANO,2024,18(45):31014-31020.
APA Li, Hui.,Xu, Chuan.,Liu, Zhibo.,Zhou, Tianya.,Tong, Jinmeng.,...&Ren, Wencai.(2024).Super High-k Unit-Cell-Thick α-CaCr2O4 Crystals.ACS NANO,18(45),31014-31020.
MLA Li, Hui,et al."Super High-k Unit-Cell-Thick α-CaCr2O4 Crystals".ACS NANO 18.45(2024):31014-31020.
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