Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors

doi:10.1038/s41928-024-01274-1

IMR OpenIR

	Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors
	Zhao, Siwen 1; Huang, Jinqiang 2,3; Crepel, Valentin 4; Xiong, Zhiren 5,6; Wu, Xingguang 5,6; Zhang, Tongyao 5,6; Wang, Hanwen 1; Han, Xiangyan 7; Li, Zhengyu 8; Xi, Chuanying 8; Pan, Senyang 8; Wang, Zhaosheng 8; Kuang, Guangli 8; Luo, Jun 9,10; Shen, Qinxin 9,10,11; Yang, Jie 9,10; Zhou, Rui 9,10; Watanabe, Kenji 12; Taniguchi, Takashi 13; Sacepe, Benjamin 14; Zhang, Jing 5,6; Wang, Ning 15,16; Lu, Jianming 7; Regnault, Nicolas 17,18; Han, Zheng Vitto 1,5,6
通讯作者	Zhang, Jing(jzhang74@sxu.edu.cn) ; Wang, Ning(phwang@ust.hk) ; Lu, Jianming(jmlu@pku.edu.cn) ; Regnault, Nicolas(nicolas.regnault@phys.ens.fr) ; Han, Zheng Vitto(vitto.han@gmail.com)
	2024-10-30
发表期刊	NATURE ELECTRONICS
ISSN	2520-1131
页码	9
摘要	Transistors based on semiconducting transition metal dichalcogenides can, in theory, offer high carrier mobilities, strong spin-orbit coupling and inherently strong electronic interactions at the quantum ground states. This makes them well suited for use in nanoelectronics at low temperatures. However, creating robust ohmic contacts to transition metal dichalcogenide layers at cryogenic temperatures is difficult. As a result, it is not possible to reach the quantum limit at which the Fermi level is close to the band edge and thus probe electron correlations in the fractionally filled Landau-level regime. Here we show that ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique. We observe field-effect mobilities of over 100,000 cm2 V-1 s-1 and quantum mobilities of over 3,000 cm2 V-1 s-1 in the conduction band at low temperatures. We also report evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide. Ohmic contacts to n-type molybdenum disulfide can be created over a temperature range from millikelvins to 300 K using a window-contacted technique, which leads to evidence for fractional quantum Hall states at filling fractions of 4/5 and 2/5 in the lowest Landau levels of bilayer molybdenum disulfide devices.
资助者	National Natural Science Foundation of China (National Science Foundation of China) ; National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Fund for Shanxi '1331 Project' Key Subjects Construction ; Innovation Program for Quantum Science and Technology ; Hong Kong Research Grants Council ; Beijing Natural Science Foundation ; JSPS KAKENHI ; World Premier International Research Center Initiative (WPI), MEXT, Japan ; QuantERA II Programme ; European Union ; European Research Council (ERC) under the European Union ; Simons Foundation ; European Union's Horizon 2020 research and innovation programme under the ERC ; High Magnetic Field Laboratory of Anhui Province
DOI	10.1038/s41928-024-01274-1
收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China (National Science Foundation of China)[2022YFA1203903] ; National Natural Science Foundation of China (National Science Foundation of China)[2023YFF1500600] ; National Natural Science Foundation of China (National Science Foundation of China)[2021YFA1400100] ; National Key R&D Program of China[92265203] ; National Key R&D Program of China[12104462] ; National Key R&D Program of China[11974357] ; National Key R&D Program of China[U1932151] ; National Key R&D Program of China[12204287] ; National Key R&D Program of China[11974027] ; National Natural Science Foundation of China (NSFC) ; Fund for Shanxi '1331 Project' Key Subjects Construction[2021ZD0302003] ; Innovation Program for Quantum Science and Technology[AoE/P-701/20] ; Hong Kong Research Grants Council[Z190011] ; Beijing Natural Science Foundation[20H00354] ; Beijing Natural Science Foundation[21H05233] ; Beijing Natural Science Foundation[23H02052] ; JSPS KAKENHI ; World Premier International Research Center Initiative (WPI), MEXT, Japan ; QuantERA II Programme[101017733] ; European Union[101020833] ; European Research Council (ERC) under the European Union ; Simons Foundation[866365] ; European Union's Horizon 2020 research and innovation programme under the ERC ; High Magnetic Field Laboratory of Anhui Province
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:001347519600001
出版者	NATURE PORTFOLIO
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/191339
专题	中国科学院金属研究所
通讯作者	Zhang, Jing; Wang, Ning; Lu, Jianming; Regnault, Nicolas; Han, Zheng Vitto
作者单位	1.Liaoning Acad Mat, Shenyang, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Peoples R China 3.Anhui Univ Sci & Technol, Sch Mat & Sci Engn, Hefei, Anhui, Peoples R China 4.Flatiron Inst, Ctr Computat Quantum Phys, New York, NY USA 5.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan, Peoples R China 6.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan, Peoples R China 7.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing, Peoples R China 8.Chinese Acad Sci, Anhui Key Lab Low Energy Quantum Mat & Devices, High Magnet Field Lab, HFIPS, Hefei, Peoples R China 9.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing, Peoples R China 10.Chinese Acad Sci, Inst Phys, Beijing, Peoples R China 11.Univ Chinese Acad Sci, Sch Phys Sci, Beijing, Peoples R China 12.Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, Tsukuba, Ibaraki, Japan 13.Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki, Japan 14.Univ Grenoble Alpes, Inst Neel, CNRS, Grenoble INP, Grenoble, France 15.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China 16.Hong Kong Univ Sci & Technol, Ctr 1D 2D Quantum Mat, Hong Kong, Peoples R China 17.Univ Paris Diderot, Univ PSL, Sorbonne Univ, Lab Phys,Ecole Normale Super,CNRS, Paris, France 18.Columbia Univ, Dept Phys, New York, NY 10027 USA
推荐引用方式 GB/T 7714	Zhao, Siwen,Huang, Jinqiang,Crepel, Valentin,et al. Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors[J]. NATURE ELECTRONICS,2024:9.
APA	Zhao, Siwen.,Huang, Jinqiang.,Crepel, Valentin.,Xiong, Zhiren.,Wu, Xingguang.,...&Han, Zheng Vitto.(2024).Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors.NATURE ELECTRONICS,9.
MLA	Zhao, Siwen,et al."Fractional quantum Hall phases in high-mobility n-type molybdenum disulfide transistors".NATURE ELECTRONICS (2024):9.