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Magnetic and Electrical Behavior of MnTe(1-x)Sb(x) Alloys
X. He; Y. Q. Zhang; Z. D. Zhang
2011
发表期刊Journal of Materials Science & Technology
ISSN1005-0302
卷号27期号:1页码:64-68
摘要The structure, specific heat, magnetic and electrical properties of MnTe(1-x)Sb(x) (x=0, 0.1, 0.15, 0.2 and 0.25) alloys have been investigated. The MnTe(1-x)Sb(x) alloys crystallize in a hexagonal NiAs-type structure, and the impurity of MnSb phase appears when x >= 0.15. The MnTe(0.9)Sb(0.1) compound exhibits ferrimagnetic behavior with hysteresis loops even at 350 K, showing that the magnetic properties of MnTe compound are very sensitive to little compositional change. The ferromagnetism in the MnTe(1-x)Sb(x) alloys with higher Sb contents may be attributed to the impurity of MnSb phase. Energy dispersive X-ray spectroscopy analysis on the MnTe(0.9)Sb(0.1) compound indicates that Sb is very difficult to dope into the lattice of MnTe. So the anomaly of resistivity at 300 K of MnTe(0.9)Sb(0.1) and the peak of specific heat around 304 K of all the alloys are thought to be related with the antiferromagnetic interactions of MnTe-based lattice.
部门归属[he, x.] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;he, x (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china;xinhe@imr.ac.cn
关键词Electronic Transport Property Hysteresis Loop Specific Heat Manganese Telluride Semiconductors Ferromagnetism Scattering Exchange
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/30385
专题中国科学院金属研究所
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X. He,Y. Q. Zhang,Z. D. Zhang. Magnetic and Electrical Behavior of MnTe(1-x)Sb(x) Alloys[J]. Journal of Materials Science & Technology,2011,27(1):64-68.
APA X. He,Y. Q. Zhang,&Z. D. Zhang.(2011).Magnetic and Electrical Behavior of MnTe(1-x)Sb(x) Alloys.Journal of Materials Science & Technology,27(1),64-68.
MLA X. He,et al."Magnetic and Electrical Behavior of MnTe(1-x)Sb(x) Alloys".Journal of Materials Science & Technology 27.1(2011):64-68.
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