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Multiple silicon nanotwins formed on the eutectic silicon particles in Al-Si alloys
C. H. Liu; J. H. Chen; C. Li; C. L. Wu; D. Z. Li; Y. Y. Li
2011
Source PublicationScripta Materialia
ISSN1359-6462
Volume64Issue:4Pages:339-342
AbstractMultiple precipitating nanotwins of {1 1 1}/[1 1 2] type have been observed forming on the eutectic Si particles in Al-Si alloys upon annealing. High-resolution transmission electron microscopy (HRTEM) reveals that these precipitating nanotwins may possess very rich microstructures, including 5-fold nanotwins and various twin junctions. The formed Si nanotwins are very thin objects that are naturally appropriate for HRTEM observations. It is very likely that the formation and the morphology of the nanotwins are related to the aging conditions. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
description.department[liu, c. h.; chen, j. h.; li, c.; wu, c. l.] hunan univ, ctr high resolut electron microscopy, coll mat sci & engn, changsha 410082, hunan, peoples r china. [li, d. z.; li, y. y.] chinese acad sci, inst met res, shenyang 110016, peoples r china.;chen, jh (reprint author), hunan univ, ctr high resolut electron microscopy, coll mat sci & engn, changsha 410082, hunan, peoples r china;jhchen123@hau.edu.cn
KeywordAluminum Alloys Twin Silicon Particles Precipitation Aluminum Growth
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WOS IDWOS:000285951600009
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Cited Times:15[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/30506
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
C. H. Liu,J. H. Chen,C. Li,et al. Multiple silicon nanotwins formed on the eutectic silicon particles in Al-Si alloys[J]. Scripta Materialia,2011,64(4):339-342.
APA C. H. Liu,J. H. Chen,C. Li,C. L. Wu,D. Z. Li,&Y. Y. Li.(2011).Multiple silicon nanotwins formed on the eutectic silicon particles in Al-Si alloys.Scripta Materialia,64(4),339-342.
MLA C. H. Liu,et al."Multiple silicon nanotwins formed on the eutectic silicon particles in Al-Si alloys".Scripta Materialia 64.4(2011):339-342.
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