Multiple silicon nanotwins formed on the eutectic silicon particles in Al-Si alloys

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	Multiple silicon nanotwins formed on the eutectic silicon particles in Al-Si alloys
	C. H. Liu; J. H. Chen; C. Li; C. L. Wu; D. Z. Li; Y. Y. Li
	2011
发表期刊	Scripta Materialia
ISSN	1359-6462
卷号	64 期号:4 页码:339-342
摘要	Multiple precipitating nanotwins of {1 1 1}/[1 1 2] type have been observed forming on the eutectic Si particles in Al-Si alloys upon annealing. High-resolution transmission electron microscopy (HRTEM) reveals that these precipitating nanotwins may possess very rich microstructures, including 5-fold nanotwins and various twin junctions. The formed Si nanotwins are very thin objects that are naturally appropriate for HRTEM observations. It is very likely that the formation and the morphology of the nanotwins are related to the aging conditions. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
部门归属	[liu, c. h.; chen, j. h.; li, c.; wu, c. l.] hunan univ, ctr high resolut electron microscopy, coll mat sci & engn, changsha 410082, hunan, peoples r china. [li, d. z.; li, y. y.] chinese acad sci, inst met res, shenyang 110016, peoples r china.;chen, jh (reprint author), hunan univ, ctr high resolut electron microscopy, coll mat sci & engn, changsha 410082, hunan, peoples r china;jhchen123@hau.edu.cn
关键词	Aluminum Alloys Twin Silicon Particles Precipitation Aluminum Growth
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WOS记录号	WOS:000285951600009
引用统计	被引频次：15[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30506
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	C. H. Liu,J. H. Chen,C. Li,et al. Multiple silicon nanotwins formed on the eutectic silicon particles in Al-Si alloys[J]. Scripta Materialia,2011,64(4):339-342.
APA	C. H. Liu,J. H. Chen,C. Li,C. L. Wu,D. Z. Li,&Y. Y. Li.(2011).Multiple silicon nanotwins formed on the eutectic silicon particles in Al-Si alloys.Scripta Materialia,64(4),339-342.
MLA	C. H. Liu,et al."Multiple silicon nanotwins formed on the eutectic silicon particles in Al-Si alloys".Scripta Materialia 64.4(2011):339-342.