Analysis on the process of ZAO films by DC magnetron reactive sputtering

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	Analysis on the process of ZAO films by DC magnetron reactive sputtering
	F. Lu; C. H. Xu; L. S. Wen
	2011
发表期刊	Science China-Technological Sciences
ISSN	1674-7321
卷号	54 期号:1 页码:28-32
摘要	The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure, optical and electrical properties was studied. Through optimizing the process parameters, an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films, the resistivity of the ZAO film is as low as 4.5x10(-4) Omega.cm and the average transmissivity in the visible region is around 80%, the optical and electrical properties meet the application requirements.
部门归属	[lu feng] shenyang jianzhu uinvers, sch transportat & mech engn, shenyang 110168, peoples r china. [xu chenghai] northeastern univ, sch mech engn & automat, shenyang 110004, peoples r china. [wen lishi] chinese acad sci, inst met res, shenyang 110015, peoples r china.;lu, f (reprint author), shenyang jianzhu uinvers, sch transportat & mech engn, shenyang 110168, peoples r china;lufeng72@126.com
关键词	Zao Film Resistivity Transmissivity Zno Temperature
URL	查看原文
WOS记录号	WOS:000286498100007
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30557
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	F. Lu,C. H. Xu,L. S. Wen. Analysis on the process of ZAO films by DC magnetron reactive sputtering[J]. Science China-Technological Sciences,2011,54(1):28-32.
APA	F. Lu,C. H. Xu,&L. S. Wen.(2011).Analysis on the process of ZAO films by DC magnetron reactive sputtering.Science China-Technological Sciences,54(1),28-32.
MLA	F. Lu,et al."Analysis on the process of ZAO films by DC magnetron reactive sputtering".Science China-Technological Sciences 54.1(2011):28-32.