| Analysis on the process of ZAO films by DC magnetron reactive sputtering | |
| F. Lu; C. H. Xu; L. S. Wen | |
| 2011 | |
| Source Publication | Science China-Technological Sciences
 |
| ISSN | 1674-7321 |
| Volume | 54Issue:1Pages:28-32 |
| Abstract | The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure, optical and electrical properties was studied. Through optimizing the process parameters, an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films, the resistivity of the ZAO film is as low as 4.5x10(-4) Omega.cm and the average transmissivity in the visible region is around 80%, the optical and electrical properties meet the application requirements. |
| description.department | [lu feng] shenyang jianzhu uinvers, sch transportat & mech engn, shenyang 110168, peoples r china. [xu chenghai] northeastern univ, sch mech engn & automat, shenyang 110004, peoples r china. [wen lishi] chinese acad sci, inst met res, shenyang 110015, peoples r china.;lu, f (reprint author), shenyang jianzhu uinvers, sch transportat & mech engn, shenyang 110168, peoples r china;lufeng72@126.com |
| Keyword | Zao Film Resistivity Transmissivity Zno Temperature |
| URL | 查看原文 |
| WOS ID | WOS:000286498100007 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/30557 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | F. Lu,C. H. Xu,L. S. Wen. Analysis on the process of ZAO films by DC magnetron reactive sputtering[J]. Science China-Technological Sciences,2011,54(1):28-32. |
| APA | F. Lu,C. H. Xu,&L. S. Wen.(2011).Analysis on the process of ZAO films by DC magnetron reactive sputtering.Science China-Technological Sciences,54(1),28-32. |
| MLA | F. Lu,et al."Analysis on the process of ZAO films by DC magnetron reactive sputtering".Science China-Technological Sciences 54.1(2011):28-32. |
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