Growth and characterization of Bi(2)Se(3) thin films by pulsed laser deposition using alloy target

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	Growth and characterization of Bi(2)Se(3) thin films by pulsed laser deposition using alloy target
	L. J. Meng; H. Meng; W. J. Gong; W. Liu; Z. D. Zhang
	2011
发表期刊	Thin Solid Films
ISSN	0040-6090
卷号	519 期号:22 页码:7627-7631
摘要	Bi(2)Se(3) thin films were deposited on the (100) oriented Si substrates by pulsed laser deposition technique at different substrate temperatures (room temperature -400 degrees C). The effects of the substrate temperature on the structural and electrical properties of the Bi(2)Se(3) films were studied. The film prepared at room temperature showed a very poor polycrystalline structure with the mainly orthorhombic phase. The crystallinity of the films was improved by heating the substrate during the deposition and the crystal phase of the film changed to the rhombohedral phase as the substrate temperature was higher than 200 degrees C. The stoichiometry of the films and the chemical state of Bi and Se elements in the films were studied by fitting the Se 3d and the Bi 4d5/2 peaks of the X-ray photoelectron spectra. The hexagonal structure was seen clearly for the film prepared at the substrate temperature of 400 degrees C. The surface roughness of the film increased as the substrate temperature was increased. The electrical resistivity of the film decreased from 1 x 10(-3) to 3 x 10(-4) Omega cm as the substrate temperature was increased from room temperature to 400 degrees C. (C) 2011 Elsevier B.V. All rights reserved.
部门归属	[meng, lijian] inst super engn porto, dept fis, p-4200072 oporto, portugal. [meng, lijian] univ minho, ctr fis, p-4800058 guimaraes, portugal. [meng, hui; gong, wenjie; liu, wei; zhang, zhidong] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;meng, lj (reprint author), inst super engn porto, dept fis, rua dr antonio bernardino de almeida 431, p-4200072 oporto, portugal;ljm@isep.ipp.pt
关键词	Pulsed Laser Deposition Thin Films Bismuth Selenide X-ray Diffraction Electrical Properties And Measurements Surface Morphology Scanning Electron Microscopy Crystal Microstructure Optical-properties Electrodeposition Photoemission
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30593
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. J. Meng,H. Meng,W. J. Gong,et al. Growth and characterization of Bi(2)Se(3) thin films by pulsed laser deposition using alloy target[J]. Thin Solid Films,2011,519(22):7627-7631.
APA	L. J. Meng,H. Meng,W. J. Gong,W. Liu,&Z. D. Zhang.(2011).Growth and characterization of Bi(2)Se(3) thin films by pulsed laser deposition using alloy target.Thin Solid Films,519(22),7627-7631.
MLA	L. J. Meng,et al."Growth and characterization of Bi(2)Se(3) thin films by pulsed laser deposition using alloy target".Thin Solid Films 519.22(2011):7627-7631.

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