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题名: Preparation of graphene by chemical vapor deposition
作者: W. C. Ren;  L. B. Gao;  L. P. Ma;  H. M. Cheng
发表日期: 2011
摘要: Chemical vapor deposition (CVD) is an effective way for the preparation of graphene with large area and high quality. In this review, the mechanism and characteristics of the four main preparation methods of graphene are briefly introduced, including micromechanical cleavage, chemical exfoliation, SiC epitaxial growth and CVD. The recent advances in the CVD growth of graphene and the related transfer techniques in terms of structure control, quality improvement and large area graphene synthesis were discussed. Other possible methods for the CVD growth of graphene were analyzed including the synthesis and nondestructive transfer of large area single crystalline graphene, graphene nanoribbons and graphene macrostructures.
KOS主题词: Graphene;  preparation;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Transfer;  Carbon;  Bore;  Photography--Films;  Finite volume method;  Surfaces;  Nickel;  phase
刊名: New Carbon Materials
相关网址: <Go to ISI>://WOS:000288313600015
Appears in Collections:中国科学院金属研究所_期刊论文

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Recommended Citation:
W. C. Ren,L. B. Gao,L. P. Ma,et al. Preparation Of Graphene By Chemical Vapor Deposition[J]. New Carbon Materials,2011,26(1):71-80.

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