| Structural and microstructural analyses of crystalline Er(2)O(3) high-k films grown on Si (001) by laser molecular beam epitaxy |
| X. Wang; Y. L. Zhu; M. He; H. B. Lu; X. L. Ma
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| 2011
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| 发表期刊 | Acta Materialia
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| ISSN | 1359-6454
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| 卷号 | 59期号:4页码:1644-1650 |
| 摘要 | Erbium oxide (Er(2)O(3)) films are well regarded as being suited for high-k replacement of SiO(2) in endeavors to further miniaturize and enhance the performance of microelectronics. Er(2)O(3) films were deposited on Si (0 0 1) substrates by laser molecular beam epitaxy. The structures and microstructures of the films and the interfacial layers were characterized by means of X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results from the XRD and selected area electron diffractions of Er(2)O(3) films with thicknesses of 30 and 100 nm indicate that the films are polycrystalline, with dominant (1 1 1) textures of Er(2)O(3) (1 1 1) // Si (0 0 1). Amorphous layers dotted with small ordered islands were observed and confirmed to be located at the interfaces between the films and the Si substrates with dark-field image and high-resolution TEM. High-resolution Z-contrast imaging, energy dispersive X-ray spectroscopy and energy-filtered imaging were applied to identify the compositions of the interfacial layers. The salient feature is that the layers consist primarily of Er and O, with a very small amount of Si. This kind of Er-O-based interface layer may play a very important role in the electrical and optical properties of the films. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 部门归属 | [wang, x.; zhu, y. l.; ma, x. l.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [he, m.; lu, h. b.] chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100190, peoples r china.;zhu, yl (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china;ylzhu@imr.ac.cn
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| 关键词 | Thin Films
High-resolution Electron Microscopy
Energy-filtered
Transmission Microscopy
Interface
Dielectrics
Thin-films
Electrical-properties
Oxide-films
Silicon
Si(001)
Dielectrics
Interface
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| URL | 查看原文
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/30744
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| 专题 | 中国科学院金属研究所
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推荐引用方式
GB/T 7714 |
X. Wang,Y. L. Zhu,M. He,et al. Structural and microstructural analyses of crystalline Er(2)O(3) high-k films grown on Si (001) by laser molecular beam epitaxy[J]. Acta Materialia,2011,59(4):1644-1650.
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| APA |
X. Wang,Y. L. Zhu,M. He,H. B. Lu,&X. L. Ma.(2011).Structural and microstructural analyses of crystalline Er(2)O(3) high-k films grown on Si (001) by laser molecular beam epitaxy.Acta Materialia,59(4),1644-1650.
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| MLA |
X. Wang,et al."Structural and microstructural analyses of crystalline Er(2)O(3) high-k films grown on Si (001) by laser molecular beam epitaxy".Acta Materialia 59.4(2011):1644-1650.
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