Theoretical Investigations of the g Factors and the Hyperfine Structure Constants of the Cr(4+) and Mn(5+) Centrs in Silicon

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	Theoretical Investigations of the g Factors and the Hyperfine Structure Constants of the Cr(4+) and Mn(5+) Centrs in Silicon
	Z. H. Zhang; S. Y. Wu; P. Xu
	2011
发表期刊	Semiconductors
ISSN	1063-7826
卷号	45 期号:5 页码:577-581
摘要	The g factors and the hyperfine structure constants of the Cr(4+) and Mn(5+) centers in silicon are theoretically investigated using the perturbation formulas of these parameters for 3d(2) ions in tetrahedra. In the calculations, both the contributions from the crystal-field and charge transfer mechanisms are taken into account based on the cluster approach. The calculated results show agreement with the observed values. It is found that the relative importance of the charge transfer contributions to the g-shift Delta g = g - g(s) (where g(s) = 2.0023 is the spin-only value) increases significantly with increasing the valence state of the impurity ion. DOI: 10.1134/S1063782611050290
部门归属	[zhang, zhi hong; wu, shao yi; xu, pei] univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china. [wu, shao yi] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;zhang, zh (reprint author), univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china;zhihongzhang723@163.com
关键词	Atomic Screening Constants Optical-spectra Doped Silicon Scf Functions Impurities Electron
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文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/30942
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. H. Zhang,S. Y. Wu,P. Xu. Theoretical Investigations of the g Factors and the Hyperfine Structure Constants of the Cr(4+) and Mn(5+) Centrs in Silicon[J]. Semiconductors,2011,45(5):577-581.
APA	Z. H. Zhang,S. Y. Wu,&P. Xu.(2011).Theoretical Investigations of the g Factors and the Hyperfine Structure Constants of the Cr(4+) and Mn(5+) Centrs in Silicon.Semiconductors,45(5),577-581.
MLA	Z. H. Zhang,et al."Theoretical Investigations of the g Factors and the Hyperfine Structure Constants of the Cr(4+) and Mn(5+) Centrs in Silicon".Semiconductors 45.5(2011):577-581.