Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO(3)

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	Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO(3)
	Y. Y. Guo; M. H. Qin; T. Wei; K. F. Wang; J. M. Liu
	2010
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	97 期号:11
摘要	Our experiments on ferroelectric aging of Al(3+)- and Ga(3+)-doped BaTiO(3) ceramics reveal the crucial role of migration kinetics of point defects (oxygen vacancies) besides the thermodynamic driving force based on the symmetry conforming short-range ordering scenario. The doping with Ga(3+) or tiny Al(3+) ions shows the clear aging effect, while the high-level Al(3+)-doping suppresses the aging effect. The suppression is mainly attributed to the kinetically limited migration of oxygen vacancies due to the lattice shrinkage, while the other mechanisms may also make sense. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3490700]
部门归属	[liu, j. -m.] nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;liu, jm (reprint author), nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词	Thin-films Ceramics Crystals Fatigue Ca
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31130
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Y. Guo,M. H. Qin,T. Wei,et al. Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO(3)[J]. Applied Physics Letters,2010,97(11).
APA	Y. Y. Guo,M. H. Qin,T. Wei,K. F. Wang,&J. M. Liu.(2010).Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO(3).Applied Physics Letters,97(11).
MLA	Y. Y. Guo,et al."Kinetics controlled aging effect of ferroelectricity in Al-doped and Ga-doped BaTiO(3)".Applied Physics Letters 97.11(2010).