First-principles study of the stability and the electronic structure of NiO/MgO interface | |
H. M. Huang; S. J. Luo; K. L. Yao | |
2010 | |
发表期刊 | Computational Materials Science
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ISSN | 0927-0256 |
卷号 | 50期号:1页码:198-202 |
摘要 | First-principles full potential linearized augmented plane wave method (FP-LAPW) based on density functional theory has been performed to study the stability and the electronic structure of NiO/MgO interface. The surface energy, strain energy and the separation energy are calculated and discussed. The results reveal that NiO(0 0 1)/MgO(0 0 1) interface is more stable than NiO(1 1 1)/MgO(1 1 1) interface. Also examined were the electronic structure and the atomic spin magnetic moment of the NiO/MgO interface. It is found that the interface system significantly affects the electronic structure and magnetic properties of the oxide/oxide interface. (C) 2010 Elsevier B.V. All rights reserved. |
部门归属 | [huang, h. m.; luo, s. j.] hubei univ automot technol, sch sci, shiyan 442002, peoples r china. [yao, k. l.] huazhong univ sci & technol, sch phys, wuhan 430074, peoples r china. [yao, k. l.] chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china.;huang, hm (reprint author), hubei univ automot technol, sch sci, shiyan 442002, peoples r china;smilehhm@163.com |
关键词 | Fp-lapw Surface Energy Interface Magnetic Anisotropy Surface Nio Adhesion Feo Coo |
URL | 查看原文 |
WOS记录号 | WOS:000284250700027 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/31169 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | H. M. Huang,S. J. Luo,K. L. Yao. First-principles study of the stability and the electronic structure of NiO/MgO interface[J]. Computational Materials Science,2010,50(1):198-202. |
APA | H. M. Huang,S. J. Luo,&K. L. Yao.(2010).First-principles study of the stability and the electronic structure of NiO/MgO interface.Computational Materials Science,50(1),198-202. |
MLA | H. M. Huang,et al."First-principles study of the stability and the electronic structure of NiO/MgO interface".Computational Materials Science 50.1(2010):198-202. |
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