The 60 degrees or 180 degrees twinned Bi-doped PbTe film studied by EBSD

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	The 60 degrees or 180 degrees twinned Bi-doped PbTe film studied by EBSD
	S. Y. Ren; Y. K. Yang; H. D. Li; D. M. Li; X. Y. Lv; P. W. Zhu
	2010
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	257 期号:1 页码:271-275
摘要	The Bi-doped PbTe film was grown on Si(1 1 1) substrate by using hot wall epitaxy (HWE) technique. The film was characterized by means of scanning electron microscopy, micro-area X-ray diffraction and electron backscatter diffraction (EBSD). The results indicate that the film is dominated by < 111 > orientation. The film consists of two twinned domains, rotated 60 degrees or 180 degrees around the normal to the film surface. It is speculated that the twinned PbTe film results from the deviated triangular grains. The ratio between the grains with two different orientations will decrease with the increase of the film thickness. Crown Copyright (C) 2010 Published by Elsevier B. V. All rights reserved.
部门归属	[ren, s. y.; yang, y. k.; li, h. d.; li, d. m.; lv, x. y.; zhu, p. w.] jilin univ, state key lab superhard mat, changchun 130012, peoples r china. [ren, s. y.] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;li, hd (reprint author), jilin univ, state key lab superhard mat, changchun 130012, peoples r china;hdli@jlu.edu.cn
关键词	Bi-doped Pbte Hot Wall Epitaxy Ebsd Twins Orientation Infrared Detectors Silicon Si(100) Si(111)
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WOS记录号	WOS:000281115800048
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/31420
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. Y. Ren,Y. K. Yang,H. D. Li,et al. The 60 degrees or 180 degrees twinned Bi-doped PbTe film studied by EBSD[J]. Applied Surface Science,2010,257(1):271-275.
APA	S. Y. Ren,Y. K. Yang,H. D. Li,D. M. Li,X. Y. Lv,&P. W. Zhu.(2010).The 60 degrees or 180 degrees twinned Bi-doped PbTe film studied by EBSD.Applied Surface Science,257(1),271-275.
MLA	S. Y. Ren,et al."The 60 degrees or 180 degrees twinned Bi-doped PbTe film studied by EBSD".Applied Surface Science 257.1(2010):271-275.