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Annealing Effect on Photovoltages of Quartz Single Crystals
L. Tian; S. Q. Zhao; K. Zhao
2010
发表期刊Chinese Physics Letters
ISSN0256-307X
卷号27期号:12
摘要We investigate the photovoltaic effects of quartz single crystals annealed at high temperatures in ambient atmosphere. The open-circuit photovoltages and surface morphologies strongly depend on the heating treatments. When the annealing temperature increases from room temperature to 900 degrees C, the rms roughness of quartz single crystal wafers increases from 0.207 to 1.011 nm. In addition, the photovoltages decrease from 1.994 mu V at room temperature to 1.551 mu V after treated at 500 degrees C, and then increase up to 9.8 mu V after annealed at 900 degrees C. The inner mechanism of the present photovoltaic response and surface morphologies is discussed.
部门归属[tian lu; zhao song-qing; zhao kun] china univ petr, state key lab heavy oil proc, beijing 102249, peoples r china. [tian lu; zhao kun] china univ petr, lab opt sensing & detecting technol, beijing 102249, peoples r china. [zhao kun] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;zhao, k (reprint author), china univ petr, state key lab heavy oil proc, beijing 102249, peoples r china;zhk@cup.edu.cn
关键词Afm Observations
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WOS记录号WOS:000285390300047
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/31477
专题中国科学院金属研究所
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GB/T 7714
L. Tian,S. Q. Zhao,K. Zhao. Annealing Effect on Photovoltages of Quartz Single Crystals[J]. Chinese Physics Letters,2010,27(12).
APA L. Tian,S. Q. Zhao,&K. Zhao.(2010).Annealing Effect on Photovoltages of Quartz Single Crystals.Chinese Physics Letters,27(12).
MLA L. Tian,et al."Annealing Effect on Photovoltages of Quartz Single Crystals".Chinese Physics Letters 27.12(2010).
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