Ultrafast and spectrally broadband photovoltaic response in quartz single crystals

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	Ultrafast and spectrally broadband photovoltaic response in quartz single crystals
	H. Liu; K. Zhao; S. Q. Zhao; N. Zhou; H. Zhao; Z. Q. Lu; A. J. Wang
	2009
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	42 期号:7
摘要	Picosecond photovoltaic response has been observed in quartz single crystals under spectrally broadband laser irradiation from ultraviolet to near infrared without an applied bias at room temperature. The 10-90% rise time and full width at half maximum are about several hundred picoseconds, which are weakly dependent on the wavelength. In addition, open-circuit photovoltages under continuum solid state lasers operating in a wide wavelength range were also observed, which exhibited much higher responsivities than those under picosecond pulsed laser irradiation. The inner mechanism of the present photovoltaic response was discussed.
部门归属	[liu, hao; zhao, kun; zhao, songqing; zhou, na; zhao, hui; lue, zhiqing; wang, aijun] china univ petr, dept math & phys, beijing 102249, peoples r china. [zhao, kun] chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;zhao, k (reprint author), china univ petr, dept math & phys, beijing 102249, peoples r china;zhk@cup.edu.cn
关键词	Yba2cu3o7-delta Thin-films Silicon Dioxide Photoresponse Photoemission Breakdown
URL	查看原文
WOS记录号	WOS:000264385900016
引用统计	被引频次：5[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/32089
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. Liu,K. Zhao,S. Q. Zhao,et al. Ultrafast and spectrally broadband photovoltaic response in quartz single crystals[J]. Journal of Physics D-Applied Physics,2009,42(7).
APA	H. Liu.,K. Zhao.,S. Q. Zhao.,N. Zhou.,H. Zhao.,...&A. J. Wang.(2009).Ultrafast and spectrally broadband photovoltaic response in quartz single crystals.Journal of Physics D-Applied Physics,42(7).
MLA	H. Liu,et al."Ultrafast and spectrally broadband photovoltaic response in quartz single crystals".Journal of Physics D-Applied Physics 42.7(2009).