Electrical Properties and Microstructure of Low-Temperature-Crystallized Lead Zirconate Titanate Thin Films Prepared by 2.45GHz Microwave Irradiation

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	Electrical Properties and Microstructure of Low-Temperature-Crystallized Lead Zirconate Titanate Thin Films Prepared by 2.45GHz Microwave Irradiation; Electrical Properties and Microstructure of Low-Temperature-Crystallized Lead Zirconate Titanate Thin Films Prepared by 2.45GHz Microwave Irradiation
	Z. J. Wang; Y. Otsuka; Z. P. Cao; H. Kokawa
	2009 ; 2009
发表期刊	Japanese Journal of Applied Physics ; Japanese Journal of Applied Physics
ISSN	0021-4922 ; 0021-4922
卷号	48 期号:9
摘要	Lead zirconate titanate (PZT) thin films were coated on Pt/Ti/SiO(2)/Si substrates by a sol-gel method and then crystallized at 490 degrees C using the magnetic field of 2.45GHz microwave irradiation. The crystalline phases and microstructures as well as the electrical properties of the PZT thin films were investigated. X-ray diffraction analysis indicated that the films were crystallized well into the perovskite phase. Scanning electron microscopy showed that the PZT films had a typical rosette structure, which consisted of large round grains on a matrix of fine grains. A transmission electron microscopy (TEM) study revealed that the fine grains were also mainly crystallized into the perovskite phase. The average remanent polarization and coercive field of the PZT films were approximately 21 mu C/cm(2) and 92 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 510 and 0.07, respectively. (C) 2009 The Japan Society of Applied Physics; Lead zirconate titanate (PZT) thin films were coated on Pt/Ti/SiO(2)/Si substrates by a sol-gel method and then crystallized at 490 degrees C using the magnetic field of 2.45GHz microwave irradiation. The crystalline phases and microstructures as well as the electrical properties of the PZT thin films were investigated. X-ray diffraction analysis indicated that the films were crystallized well into the perovskite phase. Scanning electron microscopy showed that the PZT films had a typical rosette structure, which consisted of large round grains on a matrix of fine grains. A transmission electron microscopy (TEM) study revealed that the fine grains were also mainly crystallized into the perovskite phase. The average remanent polarization and coercive field of the PZT films were approximately 21 mu C/cm(2) and 92 kV/cm, respectively, whereas the dielectric constant and loss value measured at 1 kHz were approximately 510 and 0.07, respectively. (C) 2009 The Japan Society of Applied Physics
部门归属	[wang, zhan jie] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [otsuka, yuka; cao, zhiping; kokawa, hiroyuki] tohoku univ, grad sch engn, dept mat sci & engn, sendai, miyagi 9808579, japan.;wang, zj (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china;wangzj@imr.ac.cn ; [wang, zhan jie] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. [otsuka, yuka; cao, zhiping; kokawa, hiroyuki] tohoku univ, grad sch engn, dept mat sci & engn, sendai, miyagi 9808579, japan.;wang, zj (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china;wangzj@imr.ac.cn
关键词	Pzt Pzt Ghz Ghz Ferroelectrics Ferroelectrics Fabrication Fabrication
URL	查看原文 ; 查看原文
WOS记录号	WOS:000270564800001 ; WOS:000270564800001
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/32411
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. J. Wang,Y. Otsuka,Z. P. Cao,et al. Electrical Properties and Microstructure of Low-Temperature-Crystallized Lead Zirconate Titanate Thin Films Prepared by 2.45GHz Microwave Irradiation, Electrical Properties and Microstructure of Low-Temperature-Crystallized Lead Zirconate Titanate Thin Films Prepared by 2.45GHz Microwave Irradiation[J]. Japanese Journal of Applied Physics, Japanese Journal of Applied Physics,2009, 2009,48, 48(9).
APA	Z. J. Wang,Y. Otsuka,Z. P. Cao,&H. Kokawa.(2009).Electrical Properties and Microstructure of Low-Temperature-Crystallized Lead Zirconate Titanate Thin Films Prepared by 2.45GHz Microwave Irradiation.Japanese Journal of Applied Physics,48(9).
MLA	Z. J. Wang,et al."Electrical Properties and Microstructure of Low-Temperature-Crystallized Lead Zirconate Titanate Thin Films Prepared by 2.45GHz Microwave Irradiation".Japanese Journal of Applied Physics 48.9(2009).