| Coercivity enhancement in sputtered Pr-Fe-B/FeMn thin films | |
| F. Yang; X. Wang; W. Liu; X. H. Liu; X. G. Liu; X. G. Zhao; Z. D. Zhang | |
| 2009 | |
| Source Publication | Journal of Alloys and Compounds
 |
| ISSN | 0925-8388 |
| Volume | 485Issue:1-2Pages:33-35 |
| Abstract | Pr-Fe-B/Mo/FeMn/Mo/Pr-Fe-B thin films were deposited by magnetron sputtering on Si(1 0 0)substrates heated at 650 degrees C. The coercivity of these films is obviously enhanced in comparison with that of Pr-Fe-B films. which may be due to the interfacial ferromagnetic (FM)-antiferromagnetic (AFM) exchange interaction and the change in microstructure The maximum energy product (BH)(max) of these films call also be improved by tuning the FM/AFM thickness ratio. The magnetic properties of the films vary with the thicknesses of Pr-Fe-B and FeMn layers. (C) 2009 Elsevier B.V. All rights reserved. |
| description.department | [liu, w.] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;liu, w (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china;wliu@imrac.cn |
| Keyword | Perpendicular Anisotropy Thin Films Femn Film Coercivity Enhancement Sputtering Perpendicular Magnetic-anisotropy Exchange-bias Permanent-magnets |
| URL | 查看原文 |
| WOS ID | WOS:000271542900021 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/32482 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | F. Yang,X. Wang,W. Liu,et al. Coercivity enhancement in sputtered Pr-Fe-B/FeMn thin films[J]. Journal of Alloys and Compounds,2009,485(1-2):33-35. |
| APA | F. Yang.,X. Wang.,W. Liu.,X. H. Liu.,X. G. Liu.,...&Z. D. Zhang.(2009).Coercivity enhancement in sputtered Pr-Fe-B/FeMn thin films.Journal of Alloys and Compounds,485(1-2),33-35. |
| MLA | F. Yang,et al."Coercivity enhancement in sputtered Pr-Fe-B/FeMn thin films".Journal of Alloys and Compounds 485.1-2(2009):33-35. |
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