Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity

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	Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity
	Z. G. Chen; J. Zou; G. Liu; H. F. Lu; F. Li; G. Q. Lu; H. M. Cheng
	2008
发表期刊	Nanotechnology
ISSN	0957-4484
卷号	19 期号:5
摘要	Oriented ZnS nanobelts were grown on an Si substrate using hydrogen-assisted thermal evaporation under moist gas conditions. It was found that these ZnS nanobelts had a single crystal hexagonal wurtzite structure growing along the [0001] direction. They had a rectangular cross section with lengths of up to tens of micrometres, a typical width of 50-150 nm, and a thickness of similar to 40 nm. A silicon-induced vapour-liquid-solid process was proposed for the formation of the ZnS nanobelts and their assembly. These oriented nanobelts have much faster response time to hydrogen gas than that of pure ZnO and Pd-sensitized ZnO, showing excellent hydrogen sensing properties.
部门归属	[chen, zhi-gang; liu, gang; lu, hao feng; li, feng; cheng, hui ming] chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. [chen, zhi-gang; zou, jin; lu, gao qing] univ queensland, arc ctr excellence funct nanomat, sch engn, brisbane, qld 4072, australia. [chen, zhi-gang; lu, gao qing] univ queensland, australian inst bioengn & nanotechnol, brisbane, qld 4072, australia. [zou, jin] univ queensland, ctr microscopy & microanal, brisbane, qld 4072, australia.;chen, zg (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china;maxlu@uq.edu.au cheng@imr.ac.cn
关键词	Titania Nanotubes Nanowires Sensors Photoluminescence Nanostructures Growth Co
URL	查看原文
WOS记录号	WOS:000252967100026
引用统计	被引频次：62[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/32681
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. G. Chen,J. Zou,G. Liu,et al. Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity[J]. Nanotechnology,2008,19(5).
APA	Z. G. Chen.,J. Zou.,G. Liu.,H. F. Lu.,F. Li.,...&H. M. Cheng.(2008).Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity.Nanotechnology,19(5).
MLA	Z. G. Chen,et al."Silicon-induced oriented ZnS nanobelts for hydrogen sensitivity".Nanotechnology 19.5(2008).