Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation

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	Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation
	S. B. Dun; T. C. Lu; Y. W. Hu; Q. Hu; C. F. You; N. K. Huang
	2008
发表期刊	Materials Letters
ISSN	0167-577X
卷号	62 期号:21-22 页码:3617-3619
摘要	Isotope Ge-74 ion implantation and neutron transmutation doping methods were carried out to prepare donor impurities (arsenic) doped Ge nanocrystals embedded in amorphous SiO2 film. The isotope 74 Ge atoms can react with thermal neutron and transmute to As-75 atoms, acting as donor impurities in Ge crystal. The photoluminescence intensity of donor doped Ge nanocrystals is observed increased first then decreased with increase of arsenic concentration. The non-monotonic dependence of photoluminescence on the level of doping is explained by following model: at low donor concentration, donor electrons can passivate non-radiative centers, as increasing the radiative efficiency; at high arsenic concentration, donor electrons remain free and reduce the radiative efficiency due to appearance of auger-like recombination channel. (c) 2008 Elsevier B.V. All rights reserved.
部门归属	[lu, tiecheng] chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. [dun, shaobo; hu, youwen; hu, qiang; you, caofeng; huang, ningkang] sichuan univ, dept phys, chengdu 610064, peoples r china. [dun, shaobo; hu, youwen; hu, qiang; you, caofeng; huang, ningkang] sichuan univ, key lab radiat phys & technol, minist educ, chengdu 610064, peoples r china.;lu, tc (reprint author), chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china;xianghuichang@163.com lutiecheng@scu.edu.cn
关键词	Luminescence Nanocomposites Surfaces Neutron Transmutation Doping Xps Tem Photoluminescence Luminescence Semiconductors Mechanism Matrices Defects
URL	查看原文
WOS记录号	WOS:000257639000004
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/32730
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. B. Dun,T. C. Lu,Y. W. Hu,et al. Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation[J]. Materials Letters,2008,62(21-22):3617-3619.
APA	S. B. Dun,T. C. Lu,Y. W. Hu,Q. Hu,C. F. You,&N. K. Huang.(2008).Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation.Materials Letters,62(21-22),3617-3619.
MLA	S. B. Dun,et al."Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation".Materials Letters 62.21-22(2008):3617-3619.