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Transient infrared laser-induced photovoltaic effect of ZnO/MgB2 heterostructures
S. Q. Zhao; K. Zhao; Q. L. Zhou; Y. L. Zhou; S. F. Wang; T. Y. Ning
2007
发表期刊Journal of Physics D-Applied Physics
ISSN0022-3727
卷号40期号:15页码:4489-4492
摘要We report on the infrared laser-induced photovoltaic effect of a heterostructure comprising a n-ZnO film with an electron concentration of 1.6 x 10(21) cm(-3) and a MgB2 film with a high carrier concentration of 1.8 x 10(23) cm(-3) at room temperature. Current-voltage characteristics of the structures have good rectifying diode-like behaviour. An open-circuit photovoltage of 10 ns rise time and 20 ns full width at half-maximum was observed under the illumination of a 1.064 mu m pulsed laser for a duration of 25 ps. When the junction was irradiated by a 10.6 mu m CO2 laser pulse for 60 ns, a transient photovoltaic signal of similar to 27 mV occurred with a rise time of similar to 60 ns. A possible mechanism of the observed phenomena is discussed based on the laser-induced hot carrier photovoltaic effect.
部门归属china univ petroleum, dept math & phys, beijing 102249, peoples r china. chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china. capital normal univ, dept phys, beijing 100037, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;zhao, sq (reprint author), china univ petroleum, dept math & phys, beijing 102249, peoples r china;zhk@cup.edu.cn
关键词Molecular-beam Epitaxy Mgb2 Thin-films Critical-current Density Light-emitting-diodes Room-temperature Zno Films Deposition Superconductivity
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WOS记录号WOS:000248250600019
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被引频次:10[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/34074
专题中国科学院金属研究所
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S. Q. Zhao,K. Zhao,Q. L. Zhou,et al. Transient infrared laser-induced photovoltaic effect of ZnO/MgB2 heterostructures[J]. Journal of Physics D-Applied Physics,2007,40(15):4489-4492.
APA S. Q. Zhao,K. Zhao,Q. L. Zhou,Y. L. Zhou,S. F. Wang,&T. Y. Ning.(2007).Transient infrared laser-induced photovoltaic effect of ZnO/MgB2 heterostructures.Journal of Physics D-Applied Physics,40(15),4489-4492.
MLA S. Q. Zhao,et al."Transient infrared laser-induced photovoltaic effect of ZnO/MgB2 heterostructures".Journal of Physics D-Applied Physics 40.15(2007):4489-4492.
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