Hole-injection mechanisms of organic light emitting diodes with Si anodes | |
G. L. Ma; G. Z. Ran; W. Q. Zhao; Y. H. Xu; Y. P. Qiao; B. R. Zhang; L. Dai; G. G. Qin | |
2006 | |
Source Publication | Semiconductor Science and Technology
![]() |
ISSN | 0268-1242 |
Volume | 21Issue:6Pages:740-743 |
Abstract | We have studied the hole-injection mechanisms of two types of Si anodes, polycrystalline Si (poly-Si) film and crystal Si (c-Si) wafer anodes, in organic light emitting diodes (OLEDs) and those of OLEDs with indium tin oxide anodes. It was found that the hole-injection mechanisms of these devices are very different from each other. The hole injection of the c-Si anode obeys the classic Richardson thermionic emission model and that of the poly-Si film anode agrees well with the modified thermionic emission model (Scott and Malliaras 1999 Chem. Phys. Lett. 299 115-9). When the c-Si anode is covered with a thin SiO2 layer, its hole injection changes to obey the modified thermionic emission model. |
description.department | peking univ, sch phys, beijing 100871, peoples r china. peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;ma, gl (reprint author), peking univ, sch phys, beijing 100871, peoples r china;rangz@pku.edu.cn |
Keyword | Charge Injection Silicon Anode Metal |
URL | 查看原文 |
WOS ID | WOS:000238433900007 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/34392 |
Collection | 中国科学院金属研究所 |
Recommended Citation GB/T 7714 | G. L. Ma,G. Z. Ran,W. Q. Zhao,et al. Hole-injection mechanisms of organic light emitting diodes with Si anodes[J]. Semiconductor Science and Technology,2006,21(6):740-743. |
APA | G. L. Ma.,G. Z. Ran.,W. Q. Zhao.,Y. H. Xu.,Y. P. Qiao.,...&G. G. Qin.(2006).Hole-injection mechanisms of organic light emitting diodes with Si anodes.Semiconductor Science and Technology,21(6),740-743. |
MLA | G. L. Ma,et al."Hole-injection mechanisms of organic light emitting diodes with Si anodes".Semiconductor Science and Technology 21.6(2006):740-743. |
Files in This Item: | There are no files associated with this item. |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment