IMR OpenIR
Hole-injection mechanisms of organic light emitting diodes with Si anodes
G. L. Ma; G. Z. Ran; W. Q. Zhao; Y. H. Xu; Y. P. Qiao; B. R. Zhang; L. Dai; G. G. Qin
2006
Source PublicationSemiconductor Science and Technology
ISSN0268-1242
Volume21Issue:6Pages:740-743
AbstractWe have studied the hole-injection mechanisms of two types of Si anodes, polycrystalline Si (poly-Si) film and crystal Si (c-Si) wafer anodes, in organic light emitting diodes (OLEDs) and those of OLEDs with indium tin oxide anodes. It was found that the hole-injection mechanisms of these devices are very different from each other. The hole injection of the c-Si anode obeys the classic Richardson thermionic emission model and that of the poly-Si film anode agrees well with the modified thermionic emission model (Scott and Malliaras 1999 Chem. Phys. Lett. 299 115-9). When the c-Si anode is covered with a thin SiO2 layer, its hole injection changes to obey the modified thermionic emission model.
description.departmentpeking univ, sch phys, beijing 100871, peoples r china. peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;ma, gl (reprint author), peking univ, sch phys, beijing 100871, peoples r china;rangz@pku.edu.cn
KeywordCharge Injection Silicon Anode Metal
URL查看原文
WOS IDWOS:000238433900007
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/34392
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
G. L. Ma,G. Z. Ran,W. Q. Zhao,et al. Hole-injection mechanisms of organic light emitting diodes with Si anodes[J]. Semiconductor Science and Technology,2006,21(6):740-743.
APA G. L. Ma.,G. Z. Ran.,W. Q. Zhao.,Y. H. Xu.,Y. P. Qiao.,...&G. G. Qin.(2006).Hole-injection mechanisms of organic light emitting diodes with Si anodes.Semiconductor Science and Technology,21(6),740-743.
MLA G. L. Ma,et al."Hole-injection mechanisms of organic light emitting diodes with Si anodes".Semiconductor Science and Technology 21.6(2006):740-743.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[G. L. Ma]'s Articles
[G. Z. Ran]'s Articles
[W. Q. Zhao]'s Articles
Baidu academic
Similar articles in Baidu academic
[G. L. Ma]'s Articles
[G. Z. Ran]'s Articles
[W. Q. Zhao]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[G. L. Ma]'s Articles
[G. Z. Ran]'s Articles
[W. Q. Zhao]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.