Hole-injection mechanisms of organic light emitting diodes with Si anodes

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	Hole-injection mechanisms of organic light emitting diodes with Si anodes
	G. L. Ma; G. Z. Ran; W. Q. Zhao; Y. H. Xu; Y. P. Qiao; B. R. Zhang; L. Dai; G. G. Qin
	2006
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	21 期号:6 页码:740-743
摘要	We have studied the hole-injection mechanisms of two types of Si anodes, polycrystalline Si (poly-Si) film and crystal Si (c-Si) wafer anodes, in organic light emitting diodes (OLEDs) and those of OLEDs with indium tin oxide anodes. It was found that the hole-injection mechanisms of these devices are very different from each other. The hole injection of the c-Si anode obeys the classic Richardson thermionic emission model and that of the poly-Si film anode agrees well with the modified thermionic emission model (Scott and Malliaras 1999 Chem. Phys. Lett. 299 115-9). When the c-Si anode is covered with a thin SiO2 layer, its hole injection changes to obey the modified thermionic emission model.
部门归属	peking univ, sch phys, beijing 100871, peoples r china. peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;ma, gl (reprint author), peking univ, sch phys, beijing 100871, peoples r china;rangz@pku.edu.cn
关键词	Charge Injection Silicon Anode Metal
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WOS记录号	WOS:000238433900007
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34392
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. L. Ma,G. Z. Ran,W. Q. Zhao,et al. Hole-injection mechanisms of organic light emitting diodes with Si anodes[J]. Semiconductor Science and Technology,2006,21(6):740-743.
APA	G. L. Ma.,G. Z. Ran.,W. Q. Zhao.,Y. H. Xu.,Y. P. Qiao.,...&G. G. Qin.(2006).Hole-injection mechanisms of organic light emitting diodes with Si anodes.Semiconductor Science and Technology,21(6),740-743.
MLA	G. L. Ma,et al."Hole-injection mechanisms of organic light emitting diodes with Si anodes".Semiconductor Science and Technology 21.6(2006):740-743.