Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique

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	Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique
	S. W. Xue; X. T. Zu; X. Xiang; H. Deng; Z. Q. Xu
	2006
发表期刊	European Physical Journal-Applied Physics
ISSN	1286-0042
卷号	35 期号:3 页码:195-200
摘要	Interconnected microstructural ZnO: Al thin films with low doping concentration (Al/Zn <= 1%) were deposited on ( 0001) sapphire substrates by the sol-gel technique. The effects of low doping concentration on the structural, optical and electrical properties of the films were investigated. Scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL), and four-point probe method were used to characterize the structural, optical and electrical properties. We found that with increasing the dopant concentration the interconnected thread becomes thinner, the ( 002) diffraction peak and the near band edge (NBE) emission are enhanced while the deep level emission (DLE) and the resistivity are decreased.
部门归属	univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china. univ elect sci & technol china, sch microelect & solid state elect, chengdu 610054, peoples r china. zhanjiang normal coll, dept phys, zhanjiang 524048, peoples r china.;zu, xt (reprint author), univ elect sci & technol china, dept appl phys, chengdu 610054, peoples r china;xiaotaozu@yahoo.com
关键词	Chemical-vapor-deposition Pulsed-laser Deposition Native Point-defects Zinc-oxide Films Electrical-properties Optical-properties Spray-pyrolysis Transparent Orientation Origin
URL	查看原文
WOS记录号	WOS:000240239600009
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/34630
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. W. Xue,X. T. Zu,X. Xiang,et al. Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique[J]. European Physical Journal-Applied Physics,2006,35(3):195-200.
APA	S. W. Xue,X. T. Zu,X. Xiang,H. Deng,&Z. Q. Xu.(2006).Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique.European Physical Journal-Applied Physics,35(3),195-200.
MLA	S. W. Xue,et al."Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique".European Physical Journal-Applied Physics 35.3(2006):195-200.