Microwave characteristics of SiC artificial crystal

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	Microwave characteristics of SiC artificial crystal
	H. T. Zhang; J. S. Zhang; H. Y. Zhang
	2006
Source Publication	Materials Research Bulletin
ISSN	0025-5408
Volume	41 Issue:7 Pages:1279-1286
Abstract	Design and simulation of a new type of stealthy material are presented, including theory, methodology, and results/discussion. This material consists of a three-dimensional periodic lattice of SiC ceramic dielectric rods with SiO2 as matrix. Transmission, reflection and absorption coefficients of the material are calculated. Proper parameters which meet the stealthy requirements are obtained from the numerical calculation. It's found that when conductivity is equal to 1 x 10(0.4) Sm-1, the maximum absorption loss is got at 6 GHz. The main advantages of this material are light-weight, high temperature stability, and high impedance matching the free space. (C) 2006 Elsevier Ltd. All rights reserved.
description.department	chinese acad sci, inst met res, shenyang 110016, peoples r china. univ toledo, mech ind & mfg engn dept, toledo, oh 43606 usa.;zhang, ht (reprint author), chinese acad sci, inst met res, shenyang 110016, peoples r china;hongtaozhang@imr.ac.cn jshzhang@imr.ac.cn
Keyword	Photonic Crystals
URL	查看原文
WOS ID	WOS:000238624000008
Citation statistics	Cited Times:5[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.imr.ac.cn/handle/321006/34695
Collection	中国科学院金属研究所
Recommended Citation GB/T 7714	H. T. Zhang,J. S. Zhang,H. Y. Zhang. Microwave characteristics of SiC artificial crystal[J]. Materials Research Bulletin,2006,41(7):1279-1286.
APA	H. T. Zhang,J. S. Zhang,&H. Y. Zhang.(2006).Microwave characteristics of SiC artificial crystal.Materials Research Bulletin,41(7),1279-1286.
MLA	H. T. Zhang,et al."Microwave characteristics of SiC artificial crystal".Materials Research Bulletin 41.7(2006):1279-1286.

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