X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering

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	X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering
	R. Xiong; J. Shi
	2005
发表期刊	Journal of Materials Science & Technology
ISSN	1005-0302
卷号	21 期号:4 页码:541-544
摘要	TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray photoelectron spectrocopy studies provided that the N1s core-electron spectrum of TixAl1-xN thin film brodend with increasing Ti content, and the difference of the chemical shifts for Ti2p(3/2) line between TiN and TixAl1-xN thin film was 0.7 eV.
部门归属	wuhan univ, dept phys, wuhan 430072, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;xiong, r (reprint author), wuhan univ, dept phys, wuhan 430072, peoples r china;xiongrui@whu.edu.cn
关键词	Tixal1-xn Films X-ray Photoelectron Spectroscopy Core-electron Spectrum Aluminum Nitride Films Ion Plating Method Vapor-deposition Coatings Microstructure Growth Tools Ain Ti
URL	查看原文
WOS记录号	WOS:000230978600022
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35155
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	R. Xiong,J. Shi. X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering[J]. Journal of Materials Science & Technology,2005,21(4):541-544.
APA	R. Xiong,&J. Shi.(2005).X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering.Journal of Materials Science & Technology,21(4),541-544.
MLA	R. Xiong,et al."X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering".Journal of Materials Science & Technology 21.4(2005):541-544.