Synthesis of ZnO nanoparticles on Si substrates using a ZnS source | |
Y. J. Li; R. Duan; P. B. Shi; G. G. Qin | |
2004 | |
发表期刊 | Journal of Crystal Growth
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ISSN | 0022-0248 |
卷号 | 260期号:3-4页码:309-315 |
摘要 | Crystalline ZnO nanoparticles were synthesized on Si substrates with or without a Au catalyst by a chemical vapor deposition (CVD) method using ZnS as the source material. The average sizes are in the range of 40-200 nm and the densities of 10(4)-10(10) cm(-2). In the absence of an Au catalyst, the average nanoparticle size firstly decreases and then increases with increasing substrate temperature while the nanoparticle density decreases as the substrate temperature increases. In the presence of an An catalyst, ZnO nanoparticles only grow when the substrate temperature is higher than 300 degreesC and the higher the substrate temperature the denser the nanoparticles are deposited. The density of the ZnO nanoparticles grown on a Si (111) substrate is higher than that on a Si (100) substrate with or without An catalyst. (C) 2003 Elsevier B.V. All rights reserved. |
部门归属 | peking univ, dept phys, state key lab mesoscop phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, dept phys, state key lab mesoscop phys, beijing 100871, peoples r china |
关键词 | Nanomaterials Zinc Compounds Ii-vi Materials Pulsed-laser-deposition Room-temperature Growth Film |
URL | 查看原文 |
WOS记录号 | WOS:000187781300005 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/35431 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Y. J. Li,R. Duan,P. B. Shi,et al. Synthesis of ZnO nanoparticles on Si substrates using a ZnS source[J]. Journal of Crystal Growth,2004,260(3-4):309-315. |
APA | Y. J. Li,R. Duan,P. B. Shi,&G. G. Qin.(2004).Synthesis of ZnO nanoparticles on Si substrates using a ZnS source.Journal of Crystal Growth,260(3-4),309-315. |
MLA | Y. J. Li,et al."Synthesis of ZnO nanoparticles on Si substrates using a ZnS source".Journal of Crystal Growth 260.3-4(2004):309-315. |
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