High temperature scaling of Ni-15Cu-5Al alloy in 1 X 10(5) Pa pure oxygen | |
J. H. Xiang; Y. Niu; W. T. Wu | |
2004 | |
发表期刊 | Journal of Central South University of Technology
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ISSN | 1005-9784 |
卷号 | 11期号:4页码:348-352 |
摘要 | The oxidation of the ternary alloy Ni-15Cu-5Al in 1 X 10(5) Pa pure oxygen at 700 degreesC and 800 degreesC was studied. The results show that the behavior of the Ni-rich alloy is similar to that of the binary Ni-Al alloy with the same Al content in the form of an external NiO layer coupled to the internal oxidation of aluminium. The presence of 15 % (mole fraction) Cu cannot modify substantially the values of relevant parameters affecting the transition from the internal to the external oxidation of aluminium. The presence of 5 % Al reduces the oxidation rate of the corresponding Ni-Cu alloy during the whole oxidation stages, though 5 % Al is still insufficient to form protective external alumina scales. |
部门归属 | chinese acad sci, state key lab corros & protect, inst met res, shenyang 110016, peoples r china. jiangxi sci & technol normal univ, dept appl phys, nanchang 330013, peoples r china.;xiang, jh (reprint author), chinese acad sci, state key lab corros & protect, inst met res, shenyang 110016, peoples r china;jhxiang@imr.ac.cn |
关键词 | Ni-rich Alloy High Temperature Oxidation Ternary Alloy Internal Oxidation Ternary Alloys Kinetics Nickel |
URL | 查看原文 |
WOS记录号 | WOS:000226187200002 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/35649 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | J. H. Xiang,Y. Niu,W. T. Wu. High temperature scaling of Ni-15Cu-5Al alloy in 1 X 10(5) Pa pure oxygen[J]. Journal of Central South University of Technology,2004,11(4):348-352. |
APA | J. H. Xiang,Y. Niu,&W. T. Wu.(2004).High temperature scaling of Ni-15Cu-5Al alloy in 1 X 10(5) Pa pure oxygen.Journal of Central South University of Technology,11(4),348-352. |
MLA | J. H. Xiang,et al."High temperature scaling of Ni-15Cu-5Al alloy in 1 X 10(5) Pa pure oxygen".Journal of Central South University of Technology 11.4(2004):348-352. |
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