| Structure at the crack tip in GaAs |
| Z. C. Li; L. Liu; X. Wu; L. L. He; Y. B. Xu
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| 2003
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| 发表期刊 | Philosophical Magazine Letters
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| ISSN | 0950-0839
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| 卷号 | 83期号:4页码:217-221 |
| 摘要 | Cracks induced by low-load indentation of a GaAs single crystal have been investigated by high-resolution electron microscopy. The observations reveal dislocation generation, lattice distortion, and a transformation from a crystalline to a disordered structure, leading to the occurrence of an amorphous band in front of the crack tip. |
| 部门归属 | chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. wayne state univ, dept mech engn, detroit, mi 48202 usa.;li, zc (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china
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| 关键词 | Transmission Electron-microscopy
Single-crystal
Silicon
Dislocations
Fracture
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| URL | 查看原文
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| WOS记录号 | WOS:000181838200001
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/35908
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| 专题 | 中国科学院金属研究所
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推荐引用方式
GB/T 7714 |
Z. C. Li,L. Liu,X. Wu,et al. Structure at the crack tip in GaAs[J]. Philosophical Magazine Letters,2003,83(4):217-221.
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| APA |
Z. C. Li,L. Liu,X. Wu,L. L. He,&Y. B. Xu.(2003).Structure at the crack tip in GaAs.Philosophical Magazine Letters,83(4),217-221.
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| MLA |
Z. C. Li,et al."Structure at the crack tip in GaAs".Philosophical Magazine Letters 83.4(2003):217-221.
|
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