The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots

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	The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots
	S. H. Wang; G. Y. Qin; S. F. Ren; G. G. Qin
	2001
发表期刊	Communications in Theoretical Physics
ISSN	0253-6102
卷号	35 期号:3 页码:371-380
摘要	Based on the quantum confinement-luminescence center model, to ensembles of spherical silicon nanocrystals (nc-Si) containing two kinds of luminescence centers (LCs) in the SiOinfinity layers surrounding the nc-Si, the relationship between the photoluminescence (PL) and the thickness of the SiOinfinity layer is studied with the excitation energy flux density as a parameter. When there is no SiOinfinity layer surrounding the nc-Si, the electron-heavy hole pair can only recombine inside the nc-Si, then the PL blueshift with reducing particle sizes roughly accords with the rule predicted by the quantum confinement model of Canham. When there presences a SiOinfinity layer, some of the carriers may tunnel into it and recombine outside the nc-Si at the LCs to emit visible light. The thicker the SiOinfinity layer is, the higher the radiative recombination rate occurred outside the nc-Si will be. When the central scale of the nc-Si is much smaller than the critical scale, the radiative recombination rate outside the nc-Si dominates, and visible PL will be possible for some nc-Si samples with big average radius, greater than 4 nm, for example. When there is only one kind of LC in, the SiOinfinity layer, the PL peak position does not shift with reducing particle sizes. All these conclusions are in accord with the experimental results. When there are two or more kinds of LCs in the SiOinfinity layer, the PL peak position energy and intensity swing with reducing particle sizes.
部门归属	nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china. nanjing univ, dept phys, nanjing 210093, peoples r china. nanjing inst chem technol, nanjing 210009, peoples r china. illinois state univ, dept phys, normal, il 61790 usa. peking univ, dept phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gy (reprint author), nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china
关键词	Silicon Oxide Layer Quantum Dot Luminescence Porous Silicon Si Nanocrystals Photoluminescence Mechanism States Electroluminescence Sio2-films Films Dlts
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WOS记录号	WOS:000168437400021
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36829
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	S. H. Wang,G. Y. Qin,S. F. Ren,et al. The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots[J]. Communications in Theoretical Physics,2001,35(3):371-380.
APA	S. H. Wang,G. Y. Qin,S. F. Ren,&G. G. Qin.(2001).The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots.Communications in Theoretical Physics,35(3),371-380.
MLA	S. H. Wang,et al."The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots".Communications in Theoretical Physics 35.3(2001):371-380.