Morphology of GaN in ammonia

IMR OpenIR

	Morphology of GaN in ammonia
	Y. C. Lan; X. L. Chen; Y. G. Cao; Y. P. Xu; T. Xu; J. Y. Li; Z. Tao; J. Liang
	2000
Source Publication	Journal of Materials Science Letters
ISSN	0261-8028
Volume	19 Issue:24 Pages:2215-2217
description.department	chinese acad sci, inst phys, beijing 100080, peoples r china. chinese acad sci, ctr condensed matter phys, beijing 100080, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;lan, yc (reprint author), chinese acad sci, inst phys, pob 603, beijing 100080, peoples r china
URL	查看原文
WOS ID	WOS:000166359500014
Citation statistics	Cited Times:3[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.imr.ac.cn/handle/321006/37077
Collection	中国科学院金属研究所
Recommended Citation GB/T 7714	Y. C. Lan,X. L. Chen,Y. G. Cao,et al. Morphology of GaN in ammonia[J]. Journal of Materials Science Letters,2000,19(24):2215-2217.
APA	Y. C. Lan.,X. L. Chen.,Y. G. Cao.,Y. P. Xu.,T. Xu.,...&J. Liang.(2000).Morphology of GaN in ammonia.Journal of Materials Science Letters,19(24),2215-2217.
MLA	Y. C. Lan,et al."Morphology of GaN in ammonia".Journal of Materials Science Letters 19.24(2000):2215-2217.

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