Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films

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	Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films
	L. P. You; C. L. Heng; S. Y. Ma; Z. C. Ma; W. H. Zong; Z. L. Wu; G. G. Win
	2000
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	212 期号:1-2 页码:109-114
摘要	Si-rich SiO2 films with three different degrees of Si-richness were deposited by RF magnetron sputtering using Si-SiO2 composite targets. X-ray photoelectron spectroscopy measurements indicate that Si clusters were present in the as-deposited films. The precipitation and crystallization of nanometer Si clusters in SiO2 films annealed at high temperatures have been studied using high-resolution transmission electron microscopy and electron diffraction. Si nanocrystallites were observed in the sample deposited using a Si-SiO2 composite target having a 30% area of Si and which had been annealed at 900 degrees C. The average size and density of Si nanocrystallites in the films increased notably as the annealing temperature was increased from 900 to 1100 degrees C, Thus, using a 1100 degrees C anneal and increasing the area percentage of Si in the composite target from 20 to 30%, the average size of Si nanocrystallites increased about 15%, and the density of Si nanocrystallites increased by a factor of about 2.5. (C) 2000 Elsevier Science B.V. All rights reserved.
部门归属	peking univ, dept phys, beijing 100871, peoples r china. 13th inst minist elect ind, natl lab gaas ic, shijiazhuang 050051, peoples r china. beijing normal univ, anal & testing ctr, beijing 100875, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;win, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Si-rich Sio2 Si Nanocrystallites High-resolution Transmission Electron Microscopy Visible Luminescence Optical-properties Ion-implantation Photoluminescence Nanocrystals Sio2-films Confinement
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WOS记录号	WOS:000086678100016
引用统计	被引频次：25[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37229
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. P. You,C. L. Heng,S. Y. Ma,et al. Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films[J]. Journal of Crystal Growth,2000,212(1-2):109-114.
APA	L. P. You.,C. L. Heng.,S. Y. Ma.,Z. C. Ma.,W. H. Zong.,...&G. G. Win.(2000).Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films.Journal of Crystal Growth,212(1-2),109-114.
MLA	L. P. You,et al."Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films".Journal of Crystal Growth 212.1-2(2000):109-114.