Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures

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	Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures
	G. G. Qin; Y. Q. Wang; Y. P. Qiao; B. R. Zhang; Z. C. Ma; W. H. Zong
	1999
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	74 期号:15 页码:2182-2184
摘要	SiO2/nanometer amorphous Si/SiO2 structures with Si layers of twelve different thicknesses in a range of 0-3.0 nm have been deposited with the two-target alternative magnetron sputtering technique. Electroluminescence (EL) from the Au/SiO2/nanometer amorphous Si/SiO2/p-Si structures has been observed. It is found that the EL peak intensity and peak wavelength synchronously swing with increasing Si layer thickness. The experimental results strongly indicate that the EL originates from luminescence centers in SiO2 layers rather than from the Si layers in the structures. The tunneling of electrons and holes and the quantum confinement effect for them in the nanometer Si layers play important roles in the EL. (C) 1999 American Institute of Physics. [S0003-6951(99)04315-6].
部门归属	peking univ, dept phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. 13th inst minist elect ind, shijiazhuang 050051, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	P-si Silicon Device Films
URL	查看原文
WOS记录号	WOS:000079583000027
引用统计	被引频次：23[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/37475
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. G. Qin,Y. Q. Wang,Y. P. Qiao,et al. Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures[J]. Applied Physics Letters,1999,74(15):2182-2184.
APA	G. G. Qin,Y. Q. Wang,Y. P. Qiao,B. R. Zhang,Z. C. Ma,&W. H. Zong.(1999).Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures.Applied Physics Letters,74(15),2182-2184.
MLA	G. G. Qin,et al."Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures".Applied Physics Letters 74.15(1999):2182-2184.