Large area diamond films growth in multi-filament chemical vapor deposition | |
J. Yu; R. F. Huang; L. S. Wen; C. X. Shi | |
1999 | |
发表期刊 | Materials Science and Engineering B-Solid State Materials for Advanced Technology
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ISSN | 0921-5107 |
卷号 | 57期号:3页码:255-258 |
摘要 | Large area diamond film growths were carried out on Si wafer 40 mm in diameter using multi-filament chemical vapor deposition (CVD). For the purpose of increasing the utilization ratio of reactive gases and gas how velocity a conduit and gas centralizing cavity were used during deposition. Deposited films were characterized by scanning electron microscope (SERI) and Raman spectroscopy. Thickness variations across the substrate were measured. The experimental results show that high quality diamond films were deposited all over the substrate surface. The film quality and growth rate are uniform across the substrate surface. Due to the introduction of conduit and gas-centralizing cavity the growth rate is rather high and is about 2 mu m h(-1). (C) 1999 Elsevier Science S.A. All rights reserved. |
部门归属 | acad sinica, inst met res, shenyang 110015, peoples r china.;yu, j (reprint author), chinese acad sci, inst phys, pob 603, beijing 100080, peoples r china |
关键词 | Large Area Diamond Films Gas-centralizing Cavity Microwave-plasma Phase Gas |
URL | 查看原文 |
WOS记录号 | WOS:000079046500014 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/37558 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | J. Yu,R. F. Huang,L. S. Wen,et al. Large area diamond films growth in multi-filament chemical vapor deposition[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,1999,57(3):255-258. |
APA | J. Yu,R. F. Huang,L. S. Wen,&C. X. Shi.(1999).Large area diamond films growth in multi-filament chemical vapor deposition.Materials Science and Engineering B-Solid State Materials for Advanced Technology,57(3),255-258. |
MLA | J. Yu,et al."Large area diamond films growth in multi-filament chemical vapor deposition".Materials Science and Engineering B-Solid State Materials for Advanced Technology 57.3(1999):255-258. |
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