The zero-field splitting D and g factors g(parallel to),g(perpendicular to) for V3+ ions substituting for Cu+-site and Al3+-site in CuAlS2 ternary semiconductor was calculated by using the high-order perturbation formulas based on the two spin-orbit coupling parameter model where the contributions to EPR parameters from both the spin-orbit coupling of the central 3d(2) ion and that of the ligands are considered. The calculated D, g(parallel to) and g(perpendicular to) for V3+ replacing Cu+-site are in good agreement with the observed values, whereas the calculated D value for V3+ replacing Al3+-site is not. These results show that V3+ substitutes for Cu+-site in CuAlS2 crystal. (C) 1999 Elsevier Science Ltd. All rights reserved.
部门归属
sichuan univ, dept mat sci, chengdu 610064, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;zheng, wc (reprint author), sichuan univ, dept mat sci, chengdu 610064, peoples r china
W. C. Zheng,S. Y. Wu. Studies of the zero-field splitting and g factors for V3+ in CuAlS2 crystal[J]. Journal of Physics and Chemistry of Solids,1999,60(5):599-601.
APA
W. C. Zheng,&S. Y. Wu.(1999).Studies of the zero-field splitting and g factors for V3+ in CuAlS2 crystal.Journal of Physics and Chemistry of Solids,60(5),599-601.
MLA
W. C. Zheng,et al."Studies of the zero-field splitting and g factors for V3+ in CuAlS2 crystal".Journal of Physics and Chemistry of Solids 60.5(1999):599-601.
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