Contribution of excitation in Si nanoparticles to Sm photoluminescence from Sm-doped porous silicon | |
J. Lin; A. Tsukune; M. Yamada; G. Q. Yao; G. G. Qin | |
1998 | |
发表期刊 | Physical Review B
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ISSN | 1098-0121 |
卷号 | 57期号:4页码:R2045-R2048 |
摘要 | We demonstrate that the Sm photoluminescence processes (including photoexcitation, transfer, and recombination) for Sm-doped porous Si and Sm-doped SiO2 are different: In the case of Sm-doped porous Si, there is a process by which electron-hole pairs are excited in Si nanoparticles and then transfer to Sm-related luminescence centers to recombine, in addition to the normal process of Sm-doped SiO2. The ratio of contribution to Sm luminescence of such a process to a normal one decreases with increasing the oxidation temperature. However, it has a complicated relationship with the photoexcitation wavelength. We suggest a method which makes it possible to calculate its value. |
部门归属 | fujitsu ltd, device dev div, adv mat & proc dev dept, nakahara ku, kawasaki, kanagawa 21188, japan. peking univ, dept chem, beijing 100871, peoples r china. peking univ, dept phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;lin, j (reprint author), fujitsu ltd, device dev div, adv mat & proc dev dept, nakahara ku, 4-1-1 kamikodanaka, kawasaki, kanagawa 21188, japan |
关键词 | Visible-light Emission Luminescence Mechanisms Intensity |
URL | 查看原文 |
WOS记录号 | WOS:000071834900012 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/37713 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | J. Lin,A. Tsukune,M. Yamada,et al. Contribution of excitation in Si nanoparticles to Sm photoluminescence from Sm-doped porous silicon[J]. Physical Review B,1998,57(4):R2045-R2048. |
APA | J. Lin,A. Tsukune,M. Yamada,G. Q. Yao,&G. G. Qin.(1998).Contribution of excitation in Si nanoparticles to Sm photoluminescence from Sm-doped porous silicon.Physical Review B,57(4),R2045-R2048. |
MLA | J. Lin,et al."Contribution of excitation in Si nanoparticles to Sm photoluminescence from Sm-doped porous silicon".Physical Review B 57.4(1998):R2045-R2048. |
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