| Enhancement of the HFCVD diamond growth process by directed gas flow | |
| J. Yu; R. F. Huang; L. S. Wen; C. X. Shi | |
| 1997 | |
| Source Publication | Materials Letters
 |
| ISSN | 0167-577X |
| Volume | 32Issue:2-3Pages:143-146 |
| Abstract | The effect of gas flow rate on the growth rate of hot-filament CVD diamond is reported. With increasing gas flow rate, the growth rate of the HFCVD diamond film increases. The crux of increasing the growth rate of the HFCVD diamond film is to increase the mass flow passing through the filamentary heater region and to increase the quantity of reactive gas mixture reaching the substrate surface per unit time. Eventually the growth rate of 8.67 mu m/h was obtained at the gas flow rate of 800 sccm. |
| description.department | yu, j (reprint author), acad sinica,inst met res,shenyang 110015,peoples r china |
| Keyword | Diamond Hfcvd Gas Flow Rate Growth Rate Active Species Low-pressure Deposition |
| URL | 查看原文 |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/38180 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | J. Yu,R. F. Huang,L. S. Wen,et al. Enhancement of the HFCVD diamond growth process by directed gas flow[J]. Materials Letters,1997,32(2-3):143-146. |
| APA | J. Yu,R. F. Huang,L. S. Wen,&C. X. Shi.(1997).Enhancement of the HFCVD diamond growth process by directed gas flow.Materials Letters,32(2-3),143-146. |
| MLA | J. Yu,et al."Enhancement of the HFCVD diamond growth process by directed gas flow".Materials Letters 32.2-3(1997):143-146. |
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