THE STUDY OF LATTICE STRAIN AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES

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	THE STUDY OF LATTICE STRAIN AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES
	Z. P. Guan; S. H. Song; G. H. Fan; X. W. Fan; Y. G. Peng; Y. K. Wu
	1994
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	138 期号:1-4 页码:534-537
摘要	The structural properties of ZnSe-ZnS strained-layer superlattices (SLSs) grown on GaAs (100) by atmospheric-pressure metalorganic chemical vapor deposition (AP-MOCVD) were studied using high-resolution transmission electron microscopy (HRTEM). The type and distribution of the defects in ZnSe-ZnS SLS are related to the surface quality of GaAs substrate, of the buffer layer and the thickness of each layer for ZnSe and ZnS in SLS. In this work we noticed that there are stacking faults (SFs), mismatch defects (MDs) and microtwins (MTs) in ZnSe1-xSx buffer layer at interfacial steps due to the GaAs surface not being smooth, and the dislocation can penetrate the ZnSe-ZnS SLS layer.
部门归属	acad sinica,inst met res,shenyang 110015,peoples r china.;guan, zp (reprint author), acad sinica,changchun inst phys,changchun 130021,peoples r china
关键词	Epitaxial Multilayers Dislocations Defects
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38813
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. P. Guan,S. H. Song,G. H. Fan,et al. THE STUDY OF LATTICE STRAIN AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES[J]. Journal of Crystal Growth,1994,138(1-4):534-537.
APA	Z. P. Guan,S. H. Song,G. H. Fan,X. W. Fan,Y. G. Peng,&Y. K. Wu.(1994).THE STUDY OF LATTICE STRAIN AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES.Journal of Crystal Growth,138(1-4),534-537.
MLA	Z. P. Guan,et al."THE STUDY OF LATTICE STRAIN AND HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY IN ZNSE-ZNS STRAINED-LAYER SUPERLATTICES".Journal of Crystal Growth 138.1-4(1994):534-537.