AMORPHIZATION PHENOMENON IN NI AMORPHOUS SI MULTILAYERS

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	AMORPHIZATION PHENOMENON IN NI AMORPHOUS SI MULTILAYERS
	W. H. Wang; W. K. Wang
	1994
发表期刊	Journal of Materials Research
ISSN	0884-2914
卷号	9 期号:2 页码:401-405
摘要	Interfacial reactions of Ni/amorphous Si(a-Si) multilayers are studied by means of transmission electron microscopy (TEM) and cross-sectional transmission electron microscopy (TEM). Transformation from a crystalline to an amorphous structure has been observed in as-deposited Ni/a-Si multilayers with small modulation periods. This phenomenon is suggested to be due to interdiffusion-induced solid state amorphization which is facilitated by the high density of interface in the shorter modulation period multilayers. A thermodynamic and kinetic explanation is given for this phenomenon.
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;wang, wh (reprint author), acad sinica,inst phys,beijing 100080,peoples r china
关键词	Thin-films Silicide Formation Amorphous Si Ti-si State Nucleation Interface Systems Model Alloy
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/38936
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. H. Wang,W. K. Wang. AMORPHIZATION PHENOMENON IN NI AMORPHOUS SI MULTILAYERS[J]. Journal of Materials Research,1994,9(2):401-405.
APA	W. H. Wang,&W. K. Wang.(1994).AMORPHIZATION PHENOMENON IN NI AMORPHOUS SI MULTILAYERS.Journal of Materials Research,9(2),401-405.
MLA	W. H. Wang,et al."AMORPHIZATION PHENOMENON IN NI AMORPHOUS SI MULTILAYERS".Journal of Materials Research 9.2(1994):401-405.