DEEP LEVELS IN GAMMA-RAY IRRADIATED N-TYPE AND P-TYPE HYDROGEN-GROWN FLOAT-ZONED SILICON

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	DEEP LEVELS IN GAMMA-RAY IRRADIATED N-TYPE AND P-TYPE HYDROGEN-GROWN FLOAT-ZONED SILICON
	M. H. Yuan; D. C. Peng; Q. Z. Peng; Y. H. Zhang; J. Q. Li; G. G. Qin
	1992
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	71 期号:3 页码:1182-1188
摘要	The generation rates and annealing behavior of the irradiation defects in n- and p-type hydrogen-grown float-zoned silicon (irradiated with gamma-rays from Co-60) have been studied by the deep-level transient spectroscopy technique and compared with those of irradiated argon-grown float-zoned silicon. Assuming the generation rate of the irradiation defects created by gamma-rays in argon-grown float-zoned silicon is 1, then the generation rates of the A center, divacancy, and phosphorus vacancy in n-type hydrogen-grown float-zoned silicon are 0.23, 0.78, and 0.19, respectively, while the generation rates of the divacancy and H(0.37 eV) in p-type hydrogen-grown silicon are 0.79 and 0.10, respectively. Due to the existence of hydrogen, the generation rate reduction of the major irradiation defects in gamma-ray irradiated silicon is more pronounced than that in 1-MeV electron irradiated silicon. Three hydrogen-related defects, H(0.10 eV), H(0.29 eV), and H(0.56 eV), were seen in gamma-ray irradiated hydrogen-grown float-zoned silicon, among which H(0.10 eV) and H(0.56 eV) were reported by us to exist in electron irradiated hydrogen-grown float-zoned silicon, while H(0.29 eV) is reported for the first time. The convergence effect of annealing temperatures for the irradiation defects was observed. That is, the annealing temperatures at which the irradiation defects diminish are almost the same for most irradiation defects, similar to that in the case of electron irradiation, was observed, showing that this effect is characteristic of the hydrogen behavior in silicon, and irrelevant to the type of irradiation.
部门归属	beijing univ,dept technol phys,beijing 100871,peoples r china. acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;yuan, mh (reprint author), beijing univ,dept phys,beijing 100871,peoples r china
关键词	Crystalline Semiconductors Defects
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39342
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	M. H. Yuan,D. C. Peng,Q. Z. Peng,et al. DEEP LEVELS IN GAMMA-RAY IRRADIATED N-TYPE AND P-TYPE HYDROGEN-GROWN FLOAT-ZONED SILICON[J]. Journal of Applied Physics,1992,71(3):1182-1188.
APA	M. H. Yuan,D. C. Peng,Q. Z. Peng,Y. H. Zhang,J. Q. Li,&G. G. Qin.(1992).DEEP LEVELS IN GAMMA-RAY IRRADIATED N-TYPE AND P-TYPE HYDROGEN-GROWN FLOAT-ZONED SILICON.Journal of Applied Physics,71(3),1182-1188.
MLA	M. H. Yuan,et al."DEEP LEVELS IN GAMMA-RAY IRRADIATED N-TYPE AND P-TYPE HYDROGEN-GROWN FLOAT-ZONED SILICON".Journal of Applied Physics 71.3(1992):1182-1188.