EFFECT OF STRAIN ON THE ELECTRONIC-STRUCTURES OF ULTRATHIN LAYER GAP/INP (111) SUPERLATTICE - BULK AND SURFACE

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	EFFECT OF STRAIN ON THE ELECTRONIC-STRUCTURES OF ULTRATHIN LAYER GAP/INP (111) SUPERLATTICE - BULK AND SURFACE
	E. G. Wang
	1991
发表期刊	Superlattices and Microstructures
ISSN	0749-6036
卷号	10 期号:4 页码:431-435
部门归属	acad sinica,int ctr mat phys,shenyang 110015,peoples r china.;wang, eg (reprint author), acad sinica,inst phys,surface phys lab,beijing 100080,peoples r china
关键词	Alas/gaas Superlattices
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39454
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	E. G. Wang. EFFECT OF STRAIN ON THE ELECTRONIC-STRUCTURES OF ULTRATHIN LAYER GAP/INP (111) SUPERLATTICE - BULK AND SURFACE[J]. Superlattices and Microstructures,1991,10(4):431-435.
APA	E. G. Wang.(1991).EFFECT OF STRAIN ON THE ELECTRONIC-STRUCTURES OF ULTRATHIN LAYER GAP/INP (111) SUPERLATTICE - BULK AND SURFACE.Superlattices and Microstructures,10(4),431-435.
MLA	E. G. Wang."EFFECT OF STRAIN ON THE ELECTRONIC-STRUCTURES OF ULTRATHIN LAYER GAP/INP (111) SUPERLATTICE - BULK AND SURFACE".Superlattices and Microstructures 10.4(1991):431-435.