SIMULATION AND APPLICATION OF THE DISTORTED ZOLZ PATTERNS FROM DISLOCATIONS IN SI

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	SIMULATION AND APPLICATION OF THE DISTORTED ZOLZ PATTERNS FROM DISLOCATIONS IN SI
	G. Lu; J. G. Wen; W. Zhang; R. Wang
	1990
发表期刊	Acta Crystallographica Section A
ISSN	0108-7673
卷号	46 页码:103-112
部门归属	chinese acad sci,beijing lab electron microscopy,beijing 100080,peoples r china. wuhan univ,dept phys,wuhan 430072,peoples r china.;lu, g (reprint author), chinese acad sci,inst met res,atom imaging solids lab,shenyang 110015,peoples r china
URL	查看原文
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/39579
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Lu,J. G. Wen,W. Zhang,et al. SIMULATION AND APPLICATION OF THE DISTORTED ZOLZ PATTERNS FROM DISLOCATIONS IN SI[J]. Acta Crystallographica Section A,1990,46:103-112.
APA	G. Lu,J. G. Wen,W. Zhang,&R. Wang.(1990).SIMULATION AND APPLICATION OF THE DISTORTED ZOLZ PATTERNS FROM DISLOCATIONS IN SI.Acta Crystallographica Section A,46,103-112.
MLA	G. Lu,et al."SIMULATION AND APPLICATION OF THE DISTORTED ZOLZ PATTERNS FROM DISLOCATIONS IN SI".Acta Crystallographica Section A 46(1990):103-112.