Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method

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	Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method
	Z. L. Liu; Q. Liu; H. R. Liu; K. L. Yao
	2005
发表期刊	Physica Status Solidi a-Applications and Materials Science
ISSN	0031-8965
卷号	202 期号:9 页码:1834-1841
摘要	Pb(Zr0.5Ti0.5)O-3 (PZT) and Co-doped Pb(Zr0.5Ti0.5)O-3 (PCZT) thin films have been fabricated on ITO/glass substrates by a sol-gel method combined with a rapid thermal annealing process. The films were poly-crystalline with (101)-preferred orientation. The experiments found that the addition of cobalt in PZT films greatly improved the ferroelectric properties of PZT thin films. Large remanent polarization and small coercive field were confirmed by P-E hysteresis loop measurements. The values for PZT films and PCZT films with 10 mol% Co-doped annealed at 600 degrees C were 36.5 mu C/cm(2) and 45.2 kV/cm, 58.6 mu C/cm(2) and 67.3 kV/cm, respectively. Also, dielectric properties and I-V properties of PCZT films were revealed to be sensitive to the content of cobalt. The loss factor was higher for PCZT than for PZT films. The same behavior was obtained for the leakage current density.
部门归属	huazhong univ sci & technol, dept phys, wuhan 430074, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110010, peoples r china.;liu, q (reprint author), huazhong univ sci & technol, dept phys, wuhan 430074, peoples r china;liuqing_hust@yahoo.com
关键词	Titanate Thin-films Ferroelectric Properties Dielectric-properties Bi4ti3o12 Ceramics Microstructures
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文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/40018
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. L. Liu,Q. Liu,H. R. Liu,et al. Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method[J]. Physica Status Solidi a-Applications and Materials Science,2005,202(9):1834-1841.
APA	Z. L. Liu,Q. Liu,H. R. Liu,&K. L. Yao.(2005).Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method.Physica Status Solidi a-Applications and Materials Science,202(9),1834-1841.
MLA	Z. L. Liu,et al."Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method".Physica Status Solidi a-Applications and Materials Science 202.9(2005):1834-1841.